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MT9D131C12STC-TP

Onsemi

MT9D131C12STC-TP by Onsemi

MT9D131C12STC-TP by Onsemi is an image sensor with 2.8x2.8 um pixel size, 80 MHz master clock, and 1/3.2 inch optical format. It operates at -30 to 70 °C with a dynamic range of 71 dB, suitable for digital cameras and surveillance systems due to its high sensitivity and frame rate of 30 fps.

Median Price

$16.913

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

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$16.913

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300

$16.913

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Vyrian

USA . 3,642 parts In-Stock

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Digiode

USA . 1,845 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 615 parts In-Stock

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$6.569

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615

$6.569

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Corohmni

South Africa . 434 parts In-Stock

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$16.575

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434

$16.575

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Continental Prestige Electronics

USA . 547 parts In-Stock

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$16.913

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$16.575

547

$16.913

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$16.575

Netroflash

USA . 500 parts In-Stock

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$16.913

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500

$16.913

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Ampacity Inc.

Singapore . 334 parts In-Stock

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$38.750

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334

$38.750

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Perfect Parts

USA . 10,472 parts In-Stock

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Kulean Microsystems

USA . 7,584 parts In-Stock

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TANS Electronics

Latvia . 6,980 parts In-Stock

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Argo Parts USA

USA . 2,914 parts In-Stock

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SupplyDigital Components

Austria . 2,852 parts In-Stock

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Corphita

USA . 1,901 parts In-Stock

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UHIMA Technologies

Türkiye . 848 parts In-Stock

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848

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Problanco Electronics

Mexico . 748 parts In-Stock

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Overview

Capture life's moments with crystal-clear precision using the Onsemi MT9D131C12STC-TP image sensor. Manufactured by a trusted name in the industry, this sensor offers unparalleled quality and reliability. Ideal for a wide range of applications, this sensor provides exceptional value to customers seeking top-notch performance. Experience the benefits of high resolution imaging, fast frame rates, and a wide dynamic range. Elevate your projects with the superior capabilities of the Onsemi MT9D131C12STC-TP image sensor.

Feature Benefit Bullets

Pixel Size (um): 2.8X2.8

Smaller pixel size allows for higher resolution images to be captured with more detail.

Maximum Supply Voltage: 1.95 V

Allows for efficient power consumption while providing sufficient voltage for operation.

Master Clock: 80 MHz

High master clock frequency enables fast data processing and quick response times.

Body Width: 14.22 inch

Compact body width allows for easy integration into various devices without taking up much space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology provides high sensitivity and low noise for quality image capture.

Package Shape or Style: SQUARE

Square package shape allows for easy placement and alignment during assembly.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage helps in reducing power consumption and extending battery life.

Maximum Operating Temperature: 70 °C

Wide operating temperature range makes it suitable for use in various environmental conditions.

Horizontal Pixel: 1248

High horizontal pixel count results in sharp and detailed images with enhanced clarity.

Output Range: 0.40-2.40V

Wide output range allows for flexibility in signal processing and compatibility with different systems.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies data processing and transmission for seamless integration.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature ensures reliable performance even in extreme cold environments.

Maximum Operating Current: 110 mA

Low operating current helps in conserving power and prolonging the lifespan of the sensor.

Housing: CERAMIC

Ceramic housing provides durability, thermal stability, and protection against environmental factors.

Dynamic Range: 71 dB

Wide dynamic range allows for capturing details in both dark and bright areas of an image.

Vertical Pixel: 1668

High vertical pixel count contributes to producing high-resolution images with excellent clarity and depth.

Body Length/Diameter: 14.22 mm

Compact body length/diameter facilitates easy installation and integration into various devices.

Optical Format (inch): 1/3.2

Optical format specification ensures compatibility with a wide range of imaging systems and lenses.

Termination Type: SOLDER

Solder termination provides a reliable connection and secure attachment during assembly.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies communication and data transfer with external devices or systems.

Frame Rate: 30 fps

High frame rate enables smooth and fluid image capture for real-time applications.

Array Type: FRAME

Frame array type allows for systematic and organized capture of image data for efficient processing.

Sensitivity (V/lx.s): 1 V/lx.s

High sensitivity enables the sensor to capture clear and bright images in various lighting conditions.

Mounting Feature: SURFACE MOUNT

Surface mounting feature provides easy and secure attachment to circuit boards or devices.

Technical Specifications

Image Sensors MT9D131C12STC-TP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT 2.50-3.10 V ANALOG SUPPLY VOLATGE

Array Type:

FRAME

Body Width:

14.22 inch

Body Height:

2.3 mm

Body Length/Diameter:

14.22 mm

Dynamic Range:

71 dB

Frame Rate:

30 fps

Horizontal Pixel:

1248

Housing:

CERAMIC

Master Clock:

80 MHz

Mounting Feature:

Maximum Operating Current:

110 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3.2

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.8X2.8

Sensitivity (V/lx.s):

1 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1668

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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