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MT9D131C12STCES

Onsemi

MT9D131C12STCES by Onsemi

The Onsemi MT9D131C12STCES image sensor features 2.8x2.8 um pixel size, 80 MHz master clock, and 1/3.2 inch optical format. Ideal for digital cameras, surveillance systems, and automotive applications due to its high sensitivity (1 V/lx.s), frame rate of 30 fps, and compact square package design.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,074 parts In-Stock

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Digiode

USA . 2,257 parts In-Stock

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TANS Electronics

Latvia . 8,040 parts In-Stock

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Problanco Electronics

Mexico . 5,660 parts In-Stock

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SupplyDigital Components

Austria . 3,704 parts In-Stock

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Kulean Microsystems

USA . 3,683 parts In-Stock

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Corphita

USA . 3,059 parts In-Stock

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UHIMA Technologies

Türkiye . 453 parts In-Stock

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Corohmni

South Africa . 399 parts In-Stock

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Overview

Capture stunning images with the MT9D131C12STCES image sensor from Onsemi. As a leader in the industry, Onsemi delivers top-quality products that are trusted by professionals worldwide. This innovative image sensor is perfect for a wide range of applications, offering exceptional performance and reliability. From security cameras to medical imaging equipment, this sensor provides crisp, clear images with a high dynamic range. Experience the value and benefits of the MT9D131C12STCES and take your imaging projects to the next level.

Feature Benefit Bullets

Pixel Size (um): 2.8X2.8

The small pixel size allows for high resolution images to be captured, making this image sensor suitable for applications requiring detailed images.

Maximum Supply Voltage: 1.95 V

The high maximum supply voltage provides flexibility in power supply options and ensures stable performance of the image sensor.

Master Clock: 80 MHz

The high master clock frequency enables fast processing of image data, resulting in quick response time for capturing images.

Body Width: 14.22 inch

The compact body width allows for easy integration of the image sensor into various devices and systems without taking up much space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, it offers low power consumption and high sensitivity, making it suitable for battery-operated devices and low light conditions.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature range allows the image sensor to be used in various environmental conditions without the risk of overheating.

Horizontal Pixel: 1668

The high horizontal pixel count contributes to the image sensor's ability to capture detailed and high-resolution images.

Output Range: 0.40-2.40V

The wide output range provides flexibility in signal processing and compatibility with different systems and components.

Dynamic Range: 71 dB

The high dynamic range ensures that the image sensor can accurately capture details in both bright and dark areas of the image, resulting in high-quality images.

Vertical Pixel: 1248

The vertical pixel count contributes to the image sensor's ability to capture detailed images with good clarity and sharpness.

Technical Specifications

Image Sensors MT9D131C12STCES attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT 2.5 TO 3.1 V ANALOG SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

14.22 inch

Body Height:

2.3 mm

Body Length/Diameter:

14.22 mm

Dynamic Range:

71 dB

Frame Rate:

30 fps

Horizontal Pixel:

1668

Housing:

CERAMIC

Master Clock:

80 MHz

Mounting Feature:

Maximum Operating Current:

110 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3.2

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.8X2.8

Sensitivity (V/lx.s):

1 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1248

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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