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NOIX1SF012KB-LTI

Onsemi

NOIX1SF012KB-LTI by Onsemi

NOIX1SF012KB-LTI by Onsemi is an Image Sensor with 3.2X3.2 um pixel size, 32.4 MHz master clock, and 4096 horizontal pixels. Ideal for applications requiring a digital voltage output interface, such as high-speed imaging systems or machine vision cameras.

Median Price

$1,620.000

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 3 parts In-Stock

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$1,620.000

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Digiode

USA . 739 parts In-Stock

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$297.208

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739

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Vyrian

USA . 4,086 parts In-Stock

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Flip Electronics

USA . 175 parts In-Stock

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Corphita

USA . 320 parts In-Stock

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$281.565

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320

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Corohmni

South Africa . 290 parts In-Stock

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$312.850

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290

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Kulean Microsystems

USA . 4,125 parts In-Stock

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TANS Electronics

Latvia . 2,308 parts In-Stock

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SupplyDigital Components

Austria . 1,176 parts In-Stock

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Problanco Electronics

Mexico . 343 parts In-Stock

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UHIMA Technologies

Türkiye . 173 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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Perfect Parts

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Overview

Experience the world in stunning clarity with the NOIX1SF012KB-LTI image sensor by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality products that exceed expectations. This sensor is perfect for applications such as security cameras, medical imaging, and industrial automation. With its high performance and reliability, the NOIX1SF012KB-LTI offers customers unparalleled value and benefits, making it the ideal choice for all your imaging needs. Elevate your projects to new heights with Onsemi's innovative technology.

Feature Benefit Bullets

Pixel Size (um) 3.2X3.2

Smaller pixel size allows for higher resolution images and better detail.

Maximum Supply Voltage 1.3 V

Efficient power usage with low maximum supply voltage.

Master Clock 32.4 MHz

High master clock frequency enables fast image capture and processing.

Body Width 19.9 inch

Compact body width makes it suitable for small devices or tight spaces.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS image sensors provide high-quality images with low power consumption.

Body Height 2.54 mm

Low body height for slim and sleek design applications.

Package Shape or Style RECTANGULAR

Rectangular shape for easy integration into electronic devices.

Minimum Supply Voltage 1.1 V

Low minimum supply voltage for energy-efficient operation.

Maximum Operating Temperature 85 °C

Wide operating temperature range for versatile use in various environments.

Horizontal Pixel 4096

High horizontal pixel count for detailed and sharp images.

Output Range 0.4-1.5V

Wide output range for flexibility in signal processing and analysis.

Output Type DIGITAL VOLTAGE

Digital voltage output for easy interfacing with digital systems.

Minimum Operating Temperature -40 °C

Low minimum operating temperature for reliability in cold conditions.

Maximum Operating Current 240 mA

High maximum operating current for robust performance.

Housing CERAMIC, METAL-SEALED COFIRED

Durable housing materials for long-lasting and reliable operation.

Dynamic Range 68 dB

High dynamic range for capturing a wide range of light intensities.

Vertical Pixel 3072

High vertical pixel count for detailed and clear images.

Body Length/Diameter 20.88 mm

Compact body length/diameter for space-saving integration.

Spectral Response (nm) 300-1000

Wide spectral response range for capturing various wavelengths of light.

Termination Type SOLDER

Solder termination for easy and reliable connections.

Output Interface Type I2C/SPI INTERFACE

Versatile output interface for seamless communication with external devices.

Frame Rate 90 fps

High frame rate for smooth and fluid video recording.

Array Type FRAME

Frame array type for efficient image processing and analysis.

Mounting Feature SURFACE MOUNT

Surface mount feature for easy and secure installation in electronic devices.

Technical Specifications

Image Sensors NOIX1SF012KB-LTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.7 V TO 2.9V

Array Type:

FRAME

Body Width:

19.9 inch

Body Height:

2.54 mm

Body Length/Diameter:

20.88 mm

Dynamic Range:

68 dB

Frame Rate:

90 fps

Horizontal Pixel:

4096

Housing:

CERAMIC, METAL-SEALED COFIRED

Master Clock:

32.4 MHz

Mounting Feature:

Maximum Operating Current:

240 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Interface Type:

I2C/SPI INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.2X3.2

Sensors or Transducers Type:

Spectral Response (nm):

300-1000

Maximum Supply Voltage:

1.3 V

Minimum Supply Voltage:

1.1 V

Termination Type:

SOLDER

Vertical Pixel:

3072

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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