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KAI-0373-EBA-CB-BA

Onsemi

KAI-0373-EBA-CB-BA by Onsemi

KAI-0373-EBA-CB-BA by Onsemi is an image sensor with 768x484 pixels, 11.6X13.6 um pixel size, and 60 dB dynamic range. It operates b/w -25 to +40 °C and has a supply voltage range of 14.5V to 15.5V. This rectangular CCD sensor is ideal for applications requiring high-quality imaging in industrial settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,781 parts In-Stock

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Digiode

USA . 1,093 parts In-Stock

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SupplyDigital Components

Austria . 7,344 parts In-Stock

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TANS Electronics

Latvia . 6,851 parts In-Stock

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Kulean Microsystems

USA . 3,402 parts In-Stock

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Corphita

USA . 2,318 parts In-Stock

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Corohmni

South Africa . 383 parts In-Stock

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UHIMA Technologies

Türkiye . 156 parts In-Stock

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Problanco Electronics

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Overview

Elevate your imaging experience with the KAI-0373-EBA-CB-BA by Onsemi, a cutting-edge image sensor that delivers unparalleled quality and performance. Manufactured by industry leader Onsemi, this sensor is designed to meet the demands of various applications in the field of image sensors. From capturing stunning visuals to providing exceptional clarity, this sensor offers customers unmatched value and benefits. Upgrade your imaging solutions today with the KAI-0373-EBA-CB-BA and experience the difference for yourself!

Feature Benefit Bullets

Pixel Size (um): 11.6X13.6

A larger pixel size allows for more light to be captured, resulting in improved image quality and sensitivity.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage provides flexibility in powering and operating the image sensor in various applications.

Body Width: 20.19 inch

Compact body width allows for easy integration into different device designs without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD image sensors offer high-quality image capture, making them suitable for applications where image clarity is crucial.

Body Height: 4.32 mm

Low body height enables slim device designs and allows for easier integration in space-constrained applications.

Package Shape or Style: RECTANGULAR

Rectangular package shape simplifies mounting and alignment of the image sensor in devices during the manufacturing process.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage helps in reducing power consumption and extending battery life in portable devices.

Maximum Operating Temperature: 40 °C

High maximum operating temperature ensures the image sensor can function reliably in challenging environments or conditions.

Horizontal Pixel: 768

Higher horizontal pixel count provides greater image resolution and detail, enhancing the overall quality of captured images.

Minimum Operating Temperature: 25 °C

Low minimum operating temperature allows the image sensor to function effectively even in colder environments without performance issues.

Housing: CERAMIC

Ceramic housing offers durability, thermal stability, and protection against environmental factors, ensuring long-term reliability.

Dynamic Range: 60 dB

Wide dynamic range allows the image sensor to capture details in both bright and dark areas of an image, producing balanced and high-quality results.

Vertical Pixel: 484

Higher vertical pixel count contributes to improved image clarity and sharpness, enhancing the overall visual quality of captured images.

Body Length/Diameter: 30.48 mm

Optimal body length/diameter ratio provides a balance between form factor and functionality, making the image sensor versatile in various applications.

Optical Format (inch): 2/3

2/3-inch optical format offers compatibility with a wide range of lenses and accessories, enabling flexibility in adapting to different imaging requirements.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections between the image sensor and external components, minimizing the risk of signal loss or interference.

Array Type: INTERLINE

Interline array type allows for faster readout speeds and reduced image distortion, making it ideal for applications requiring real-time image processing.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting simplifies installation and ensures secure attachment of the image sensor to printed circuit boards or other surfaces in devices.

Technical Specifications

Image Sensors KAI-0373-EBA-CB-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 9 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

20.19 inch

Body Height:

4.32 mm

Body Length/Diameter:

30.48 mm

Dynamic Range:

60 dB

Horizontal Pixel:

768

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

25 Cel

Optical Format (inch):

2/3

Package Shape or Style:

Pixel Size (um):

11.6X13.6

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

484

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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