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MT9P401I12STC

Onsemi

MT9P401I12STC by Onsemi

The Onsemi MT9P401I12STC is a 2.2x2.2um image sensor with 2592H x 1944V pixels, operating at -30 to 70 °C. It requires a 2.8V power supply and features surface mounting, making it ideal for high-resolution imaging applications in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

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1k+

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Vyrian

USA . 2,024 parts In-Stock

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Digiode

USA . 1,048 parts In-Stock

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Bristol Electronics

USA . 30 parts In-Stock

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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SupplyDigital Components

Austria . 7,947 parts In-Stock

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TANS Electronics

Latvia . 5,505 parts In-Stock

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Corphita

USA . 4,472 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Kulean Microsystems

USA . 3,185 parts In-Stock

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Problanco Electronics

Mexico . 1,925 parts In-Stock

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Futuretech Components

Singapore . 755 parts In-Stock

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Corohmni

South Africa . 239 parts In-Stock

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UHIMA Technologies

Türkiye . 167 parts In-Stock

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Kepictronics

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Overview

Capture the world in stunning clarity with the MT9P401I12STC image sensor by Onsemi. Known for their top-notch quality and reliability, Onsemi delivers cutting-edge technology that exceeds expectations. Ideal for a wide range of applications, this image sensor offers unmatched precision and detail, allowing you to take your projects to the next level. Experience the benefits of superior imaging performance and unlock endless possibilities with the MT9P401I12STC.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

The small pixel size allows for high resolution and detailed images to be captured, making it ideal for applications requiring precision.

Power Supplies (V): 2.8

The low power supply requirement of 2.8V ensures energy efficiency and can be easily integrated into various electronic systems.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70 °C, this image sensor can withstand harsh environmental conditions, increasing its durability and versatility.

Horizontal Pixel: 2592

The high horizontal pixel count of 2592 results in high-quality images with rich detail and clarity, making it suitable for professional photography and industrial imaging applications.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature of -30 °C ensures reliable performance even in cold climates, making it a great choice for outdoor and remote sensing applications.

Vertical Pixel: 1944

The vertical pixel count of 1944 contributes to the overall high resolution and image quality, allowing for crisp and clear images to be captured in various settings.

Mounting Feature: SURFACE MOUNT

The surface mount feature enables easy and secure installation of the image sensor onto circuit boards or other surfaces, simplifying the manufacturing and integration process.

Technical Specifications

Image Sensors MT9P401I12STC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Horizontal Pixel:

2592

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Pixel Size (um):

2.2X2.2

Power Supplies (V):

2.8

Sub-Category:

CCD Image Sensors

Vertical Pixel:

1944

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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