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KAI-16000-AXA-JR-AE

Onsemi

KAI-16000-AXA-JR-AE by Onsemi

KAI-16000-AXA-JR-AE by Onsemi is an image sensor with 7.4x7.4 um pixel size, 4872 horizontal pixels, and 3248 vertical pixels. It operates b/w -50 to 70 °C with a dynamic range of 65 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 770 parts In-Stock

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770

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Digiode

USA . 91 parts In-Stock

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91

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SupplyDigital Components

Austria . 5,462 parts In-Stock

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Problanco Electronics

Mexico . 5,394 parts In-Stock

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Kulean Microsystems

USA . 4,641 parts In-Stock

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TANS Electronics

Latvia . 3,450 parts In-Stock

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Corphita

USA . 2,322 parts In-Stock

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UHIMA Technologies

Türkiye . 339 parts In-Stock

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Corohmni

South Africa . 154 parts In-Stock

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Overview

Capture every detail with the KAI-16000-AXA-JR-AE image sensor from Onsemi, designed to deliver unparalleled quality and precision. As a leader in image sensor technology, Onsemi ensures superior performance and reliability in every product they create. This advanced sensor is perfect for applications that demand exceptional clarity and accuracy, making it ideal for industries such as medical imaging, industrial automation, and scientific research. Elevate your imaging experience with the KAI-16000-AXA-JR-AE and unlock a world of possibilities.

Feature Benefit Bullets

Pixel Size (um)

Large pixel size allows for better light sensitivity and improved image quality

Maximum Supply Voltage

Wide voltage range allows for flexibility in power supply options

Body Width

Compact size makes it suitable for use in various applications with limited space

Sensors or Transducers Type

CCD sensors provide high-quality images with low noise levels

Body Height

Low profile design enables easy integration into different devices

Package Shape or Style

Rectangular shape offers versatility in installation and mounting options

Minimum Supply Voltage

Low minimum supply voltage helps in reducing power consumption

Maximum Operating Temperature

Wide operating temperature range ensures reliability in varying environmental conditions

Horizontal Pixel

High pixel count allows for detailed and sharp image capture

Minimum Operating Temperature

Wide temperature range ensures functionality even in extremely cold conditions

Dynamic Range

High dynamic range enables capturing of both bright and dark areas in a single image

Vertical Pixel

Vertical pixel count adds to the overall image resolution and clarity

Body Length/Diameter

Optimal size for fitting into various camera systems and devices

Optical Format (inch)

Suitable optical format for capturing images with good depth and clarity

Data Rate

High data rate allows for quick and efficient image transfer

Termination Type

Solder termination ensures secure and reliable electrical connections

Array Type

Interline array type offers fast readout speeds and reduced image noise

Mounting Feature

Through hole mount allows for secure and stable attachment to circuit boards or devices

Technical Specifications

Image Sensors KAI-16000-AXA-JR-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 30 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

44.45 inch

Body Height:

4.88 mm

Body Length/Diameter:

45.34 mm

Data Rate:

30 Mbps

Dynamic Range:

65 dB

Horizontal Pixel:

4872

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/2.9

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

3248

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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