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NOIP3SE5000A-QTI

Onsemi

NOIP3SE5000A-QTI by Onsemi

NOIP3SE5000A-QTI by Onsemi is a 4.8x4.8 um CMOS image sensor with 2592x2048 pixels, 60 dB dynamic range, and 45 fps frame rate. It operates b/w -40 to 85 °C and has a spectral response of 400-1000 nm. Ideal for applications requiring high-resolution imaging in various lighting conditions.

Median Price

$207.063

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 166 parts In-Stock

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$187.970

100+ parts

$176.690

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$165.410

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DigiKey

USA . 45 parts In-Stock

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$231.190

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$201.130

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Flip Electronics (Authorized)

USA . 126 parts In-Stock

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Verical

USA . 49 parts In-Stock

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$207.063

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$193.838

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$193.838

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Digiode

USA . 1,290 parts In-Stock

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$194.380

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Vyrian

USA . 5,721 parts In-Stock

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USA . 66 parts In-Stock

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Corphita

USA . 1,228 parts In-Stock

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$184.149

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Corohmni

South Africa . 99 parts In-Stock

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$204.610

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Problanco Electronics

Mexico . 6,098 parts In-Stock

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TANS Electronics

Latvia . 6,082 parts In-Stock

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Kulean Microsystems

USA . 5,129 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 519 parts In-Stock

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UHIMA Technologies

Türkiye . 323 parts In-Stock

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Perfect Parts

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Overview

Unlock a world of crystal-clear imaging with the NOIP3SE5000A-QTI from Onsemi. As a trusted industry leader, Onsemi delivers unrivaled quality and reliability in the field of image sensors. This cutting-edge technology is perfect for applications where precision and performance are paramount. With its advanced features and state-of-the-art design, this image sensor offers customers exceptional value and unmatched benefits. Experience superior image quality and seamless integration with the NOIP3SE5000A-QTI – your gateway to next-level imaging solutions.

Feature Benefit Bullets

Pixel Size (um): 4.8X4.8

Smaller pixel size allows for higher resolution images to be captured, making this image sensor suitable for applications where detailed image quality is important.

Maximum Supply Voltage: 1.9 V

Operating at a low maximum supply voltage helps in reducing power consumption and heat generation, resulting in energy-efficient performance.

Master Clock: 360 MHz

High master clock frequency enables fast data processing and readout speeds, making this image sensor suitable for applications that require quick image capture and processing.

Body Width: 19 inch

Compact body width allows for easy integration into various devices and systems without taking up much space.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS sensors are known for their low power consumption, high quality images, and good performance in low light conditions, making this image sensor a reliable choice for diverse applications.

Package Shape or Style: SQUARE

Square package shape provides a symmetrical and uniform design, facilitating easy handling, mounting, and integration into different products.

Minimum Supply Voltage: 1.7 V

Having a low minimum supply voltage ensures the image sensor can operate effectively even in low power scenarios, enhancing its versatility.

Maximum Operating Temperature: 85 °C

High maximum operating temperature range allows for the image sensor to be used in various environmental conditions without compromising performance.

Horizontal Pixel: 2592

High horizontal pixel count enables capturing detailed and high-resolution images, making this image sensor suitable for applications where image clarity is crucial.

Minimum Operating Temperature: -40 °C

Wide minimum operating temperature range ensures the image sensor can function reliably even in extreme cold conditions, expanding its usability in different environments.

Dynamic Range: 60 dB

Good dynamic range allows the image sensor to capture both bright and dark areas in the image with detail, ensuring high-quality images in varying lighting conditions.

Vertical Pixel: 2048

Having a high vertical pixel count enhances the resolution of the captured images, making this image sensor suitable for applications where image detail is critical.

Body Length/Diameter: 19 mm

Compact body length/diameter makes this image sensor easy to integrate into devices and systems with space constraints.

Spectral Response (nm): 400-1000

Wide spectral response range allows the image sensor to capture a broad range of wavelengths, making it versatile for diverse applications involving various light sources.

Termination Type: SOLDER

Solder termination ensures a secure and reliable connection, contributing to the image sensor's durability and long-term performance.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface enables seamless communication with external devices, enhancing the image sensor's compatibility and ease of integration in different systems.

Frame Rate: 45 fps

High frame rate allows for smooth and real-time image capture, making this image sensor ideal for applications requiring fast image processing and analysis.

Array Type: FRAME

Frame array type helps in capturing multiple frames quickly, facilitating high-speed and efficient image capture in dynamic environments.

Sensitivity (V/lx.s): 7.5 V/lx.s

High sensitivity rating enables the image sensor to detect and capture even subtle light variations, ensuring accurate and detailed image reproduction.

Mounting Feature: SURFACE MOUNT

Surface mounting feature allows for easy and secure attachment to circuit boards, enhancing the image sensor's stability and reliability during operation.

Technical Specifications

Image Sensors NOIP3SE5000A-QTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

19 inch

Body Height:

2.41 mm

Body Length/Diameter:

19 mm

Dynamic Range:

60 dB

Frame Rate:

45 fps

Horizontal Pixel:

2592

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.8X4.8

Sensitivity (V/lx.s):

7.5 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

2048

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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