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NOIP1SE012KA-GTI

Onsemi

NOIP1SE012KA-GTI by Onsemi

NOIP1SE012KA-GTI by Onsemi is an image sensor with 4.5x4.5 um pixel size, 360 MHz master clock, and 4096 horizontal pixels. It is ideal for applications requiring high-speed imaging with a frame rate of 160 fps and a dynamic range of 59 dB in a compact rectangular package measuring 43.1mm x 36.1mm x 3.5mm.

Median Price

$1,472.630

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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DigiKey

USA . 8 parts In-Stock

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$1,472.630

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Flip Electronics (Authorized)

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Vyrian

USA . 4,505 parts In-Stock

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Digiode

USA . 846 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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AZTECH Wire

Italy . 1,061 parts In-Stock

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$12.930

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Ampacity Inc.

Singapore . 8 parts In-Stock

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$19.750

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Problanco Electronics

Mexico . 7,864 parts In-Stock

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TANS Electronics

Latvia . 6,508 parts In-Stock

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Corphita

USA . 2,484 parts In-Stock

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SupplyDigital Components

Austria . 1,217 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 964 parts In-Stock

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Kulean Microsystems

USA . 700 parts In-Stock

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Corohmni

South Africa . 364 parts In-Stock

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Overview

Unlock a world of high-quality image sensing with the NOIP1SE012KA-GTI by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge technology and innovation to its image sensors category, offering unparalleled performance and reliability. Ideal for a wide range of applications, this product provides customers with exceptional value, benefits, and advantages. Experience crystal-clear imaging and seamless integration with the NOIP1SE012KA-GTI, setting new standards in image sensing technology.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

Smaller pixel size allows for higher resolution imagery and better imaging in low light conditions.

Maximum Supply Voltage: 1.9 V

Efficient power consumption at maximum supply voltage ensures longer battery life.

Master Clock: 360 MHz

High master clock frequency enables fast data readout and processing.

Body Width: 36.1 inch

Compact body width allows for easy integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors provide high image quality and low power consumption for optimal performance.

Body Height: 3.5 mm

Low body height enables slim design and easy installation in constrained spaces.

Package Shape or Style: RECTANGULAR

Rectangular package shape provides compatibility with standard mounting configurations.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage ensures efficient power usage even at lower power levels.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for use in various environmental conditions.

Horizontal Pixel: 4096

High horizontal pixel count provides detailed and sharp images.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures functionality even in extreme cold conditions.

Dynamic Range: 59 dB

Wide dynamic range captures high contrast scenes with accuracy and detail.

Vertical Pixel: 3072

High vertical pixel count provides clear and precise image capture.

Body Length/Diameter: 43.1 mm

Optimal body length/diameter ratio for balance between compactness and functionality.

Optical Format (inch): 4/3

Standard optical format for compatibility with various lenses and optical systems.

Termination Type: SOLDER

Solder termination type ensures secure and reliable electrical connections.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface allows for fast and efficient data transfer.

Frame Rate: 160 fps

High frame rate enables smooth and clear video capture.

Array Type: FRAME

Frame array type enhances image quality and processing speed.

Sensitivity (V/lx.s): 5.8 V/lx.s

High sensitivity allows for accurate image capture even in low light conditions.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature provides secure and stable installation.

Technical Specifications

Image Sensors NOIP1SE012KA-GTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

36.1 inch

Body Height:

3.5 mm

Body Length/Diameter:

43.1 mm

Dynamic Range:

59 dB

Frame Rate:

160 fps

Horizontal Pixel:

4096

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

4/3

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensitivity (V/lx.s):

5.8 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

3072

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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