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CYII4SC014KAA-GAC

Onsemi

CYII4SC014KAA-GAC by Onsemi

CYII4SC014KAA-GAC by Onsemi is an 8x8 um CMOS image sensor with a max supply voltage of 3.3V and a master clock of 15 MHz. It offers a dynamic range of 65 dB, operates b/w 0-50 °C, and outputs analog voltage from 0.50-3V. Ideal for applications requiring full-frame array type sensors with SPI interface and through-hole mounting features at a frame rate of 3.25 fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 2,190 parts In-Stock

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Vyrian

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Problanco Electronics

Mexico . 6,885 parts In-Stock

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TANS Electronics

Latvia . 4,660 parts In-Stock

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SupplyDigital Components

Austria . 4,287 parts In-Stock

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Corphita

USA . 2,451 parts In-Stock

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Northwest PG Solutions

USA . 1,226 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 332 parts In-Stock

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Corohmni

South Africa . 117 parts In-Stock

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Overview

Elevate your imaging capabilities with the CYII4SC014KAA-GAC by Onsemi. As a leading manufacturer in image sensors, Onsemi delivers top-notch quality and reliability. This sensor is perfect for applications requiring high resolution and clarity, offering customers unparalleled value and benefits. Whether you're capturing stunning visuals for medical imaging, surveillance systems, or industrial automation, this sensor provides exceptional performance and precision. Upgrade to the CYII4SC014KAA-GAC today and take your imaging projects to the next level.

Feature Benefit Bullets

Pixel Size (um): 8x8

Small pixel size allows for high resolution images to be captured, providing detailed and sharp images.

Maximum Supply Voltage: 3.3V

Operates at a low voltage, offering energy efficiency and reducing power consumption.

Master Clock: 15MHz

High master clock frequency enables fast data processing and image capture speed.

Body Width: 32.4 inch

Compact and slim body width makes it suitable for integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS image sensor technology provides high-quality images with low noise and efficient power consumption.

Body Height: 3.38mm

Low profile body height enables easy integration and installation in compact spaces.

Package Shape or Style: RECTANGULAR

Rectangular package shape offers simplicity in design and mounting for manufacturers.

Maximum Operating Temperature: 50 °C

Wide operating temperature range allows for use in various environmental conditions and applications.

Output Range: 0.50-3V

Wide output voltage range provides flexibility in signal processing and compatibility with different systems.

Output Type: ANALOG VOLTAGE

An analog voltage output allows for easy interface with analog signal processing circuits and systems.

Minimum Operating Temperature: 0 °C

Can operate in low-temperature environments without loss of performance or functionality.

Dynamic Range: 65 dB

High dynamic range allows for capturing a wide range of light intensities, resulting in accurate and detailed images.

Body Length/Diameter: 45.5mm

Optimal body length/diameter ratio for easy integration and compatibility with standard mounting methods.

Termination Type: SOLDER

Solder termination provides a reliable and durable connection for long-term use and performance.

Output Interface Type: SPI INTERFACE

SPI interface offers fast and efficient communication with external devices and systems for data transfer.

Frame Rate: 3.25fps

Decent frame rate enables capturing of moving objects and fast-paced scenes with smooth video output.

Array Type: FULL FRAME

Full frame array captures images with minimal cropping or distortion, preserving the original composition and details.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature provides secure and stable attachment to circuit boards or other surfaces.

Technical Specifications

Image Sensors CYII4SC014KAA-GAC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ROLLING SHUTTER

Array Type:

FULL FRAME

Body Width:

32.4 inch

Body Height:

3.38 mm

Body Length/Diameter:

45.5 mm

Dynamic Range:

65 dB

Frame Rate:

3.25 fps

Master Clock:

15 MHz

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

0 Cel

Output Interface Type:

SPI INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

8X8

Sensors or Transducers Type:

Maximum Supply Voltage:

3.3 V

Termination Type:

SOLDER

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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