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CYII5SC1300AA-QAC

Onsemi

CYII5SC1300AA-QAC by Onsemi

Onsemi's CYII5SC1300AA-QAC is a 6.7x6.7 um CMOS image sensor with 40 MHz master clock, ideal for full-frame array applications. Operating at 3-3.6V, it offers a digital voltage output range of 0.50-2.20V and sensitivity of 8.46 V/lx.s, suitable for surface mounting in various optical format setups up to 2/3 inch size with a dynamic range of 64 dB at temperatures ranging from 0 to 50 °C.

Median Price

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Lifecycle Status

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Digiode

USA . 1,650 parts In-Stock

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Vyrian

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Native Components

USA . 3 parts In-Stock

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Northwest PG Solutions

USA . 910 parts In-Stock

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SupplyDigital Components

Austria . 8,293 parts In-Stock

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TANS Electronics

Latvia . 5,602 parts In-Stock

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Problanco Electronics

Mexico . 2,704 parts In-Stock

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Kulean Microsystems

USA . 1,523 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 846 parts In-Stock

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Corohmni

South Africa . 332 parts In-Stock

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Overview

Capture stunning images with the CYII5SC1300AA-QAC image sensor by Onsemi. Renowned for their superior quality and cutting-edge technology, Onsemi delivers top-notch products in the field of image sensors. This sensor boasts a pixel size of 6.7X6.7um and a dynamic range of 64dB, making it perfect for high-quality imaging applications. With a maximum supply voltage of 3.6V and a frame rate of 27fps, this sensor offers customers unparalleled value, precision, and performance. Upgrade your imaging system today with the CYII5SC1300AA-QAC and experience the difference!

Feature Benefit Bullets

Pixel Size (um): 6.7X6.7

Larger pixel size allows for better light sensitivity and improved image quality.

Maximum Supply Voltage: 3.6 V

Allows for safe operation within specified voltage limits.

Master Clock: 40 MHz

High master clock frequency enables fast data readout and processing.

Body Width: 15.24 inch

Compact body width allows for easy integration into various imaging systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology offers low power consumption and high sensitivity.

Body Height: 2.25 mm

Slim body height facilitates installation in space-constrained environments.

Package Shape or Style: SQUARE

Square package shape ensures uniform sensor placement and alignment.

Minimum Supply Voltage: 3 V

Wide voltage range allows for flexibility in power supply options.

Maximum Operating Temperature: 50 °C

High maximum operating temperature range enables use in harsh environments.

Output Range: 0.50-2.20V

Wide output range provides flexibility in signal processing and adjustment.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and interfacing with other devices.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature allows for reliable performance in cold conditions.

Maximum Operating Current: 60 mA

Low operating current requirement for power-efficient operation.

Housing: CERAMIC, METAL-SEALED COFIRED

Durable housing materials ensure protection from external environmental factors.

Dynamic Range: 64 dB

Wide dynamic range enables capturing details in both bright and dark areas of an image.

Body Length/Diameter: 15.24 mm

Compact body length/diameter for easy integration and mounting in various systems.

Optical Format (inch): 2/3

Optical format compatibility with standard optics for seamless integration.

Termination Type: SOLDER

Solder termination for secure and reliable electrical connections.

Output Interface Type: 3-WIRE INTERFACE

Easy interface connectivity with 3-wire interface for data transmission.

Frame Rate: 27 fps

High frame rate for smooth and real-time image capture and processing.

Array Type: FULL FRAME

Full frame array design for comprehensive image capture without cropping or distortion.

Sensitivity (V/lx.s): 8.46 V/lx.s

High sensitivity for capturing detailed images in low light conditions.

Mounting Feature: SURFACE MOUNT

Surface mounting feature for quick and secure installation on PCBs or devices.

Technical Specifications

Image Sensors CYII5SC1300AA-QAC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

DUAL SHUTTER MODE

Array Type:

FULL FRAME

Body Width:

15.24 inch

Body Height:

2.25 mm

Body Length/Diameter:

15.24 mm

Dynamic Range:

64 dB

Frame Rate:

27 fps

Housing:

CERAMIC, METAL-SEALED COFIRED

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

2/3

Output Interface Type:

3-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6.7X6.7

Sensitivity (V/lx.s):

8.46 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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