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KAI-2001-CBA-CD-BA

Onsemi

KAI-2001-CBA-CD-BA by Onsemi

KAI-2001-CBA-CD-BA by Onsemi is an image sensor with 7.4um pixel size, 1600 horizontal pixels, and 1200 vertical pixels. It operates at a max supply voltage of 15.5V and has a dynamic range of 60dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,869 parts In-Stock

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Digiode

USA . 490 parts In-Stock

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490

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Kulean Microsystems

USA . 8,342 parts In-Stock

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SupplyDigital Components

Austria . 6,888 parts In-Stock

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Problanco Electronics

Mexico . 5,013 parts In-Stock

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TANS Electronics

Latvia . 4,745 parts In-Stock

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Corphita

USA . 1,606 parts In-Stock

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Corohmni

South Africa . 320 parts In-Stock

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UHIMA Technologies

Türkiye . 129 parts In-Stock

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Overview

Capture stunning images with the KAI-2001-CBA-CD-BA by Onsemi, a top-quality image sensor that delivers exceptional performance and reliability. As a leading manufacturer in the industry, Onsemi ensures that this product meets the highest standards for image sensors. Ideal for a wide range of applications, this CCD sensor offers crisp and clear images with a high dynamic range. Experience the value and benefits of this cutting-edge technology, providing customers with a competitive edge in their imaging needs. Elevate your projects with the KAI-2001-CBA-CD-BA and unlock endless possibilities in image capture.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

The small pixel size allows for high resolution and detailed images to be captured.

Maximum Supply Voltage: 15.5 V

With a higher maximum supply voltage, this sensor can operate efficiently and reliably.

Body Width: 20.32 inch

The compact body width makes it suitable for integration into various devices and applications.

Sensors or Transducers Type: IMAGE SENSOR,CCD

The CCD sensor type ensures high-quality image capture with accurate colors and low noise.

Body Height: 3.56 mm

The low body height enables a slim design and easy integration into space-constrained devices.

Package Shape or Style: RECTANGULAR

The rectangular shape allows for easy mounting and alignment in devices.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage helps in reducing power consumption and improving efficiency.

Horizontal Pixel: 1600

With a high horizontal pixel count, this sensor can capture detailed and high-resolution images.

Output Type: ANALOG VOLTAGE

The analog voltage output simplifies signal processing and integration with other systems.

Dynamic Range: 60 dB

The wide dynamic range allows for capturing both bright and dark areas in the scene with good detail.

Vertical Pixel: 1200

The vertical pixel count contributes to the overall resolution and quality of the captured images.

Body Length/Diameter: 33.02 mm

The moderate body length/diameter provides a balance between compactness and functionality.

Data Rate: 40 Mbps

The high data rate enables fast and real-time image processing capabilities.

Termination Type: SOLDER

The solder termination ensures secure and reliable electrical connections for long-term performance.

Array Type: INTERLINE

The interline array type offers fast readout speeds and reduces image lag for capturing moving objects.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for secure and stable installation in device assemblies.

Technical Specifications

Image Sensors KAI-2001-CBA-CD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 14 UV/ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

20.32 inch

Body Height:

3.56 mm

Body Length/Diameter:

33.02 mm

Data Rate:

40 Mbps

Dynamic Range:

60 dB

Horizontal Pixel:

1600

Mounting Feature:

Output Type:

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1200

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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