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KAI-0340-AAA-CP-AA

Onsemi

KAI-0340-AAA-CP-AA by Onsemi

KAI-0340-AAA-CP-AA by Onsemi is an image sensor with 7.4x7.4 um pixel size, 640 horizontal pixels, and 480 vertical pixels. It operates b/w -50 to 70 °C with a dynamic range of 62 dB. Ideal for applications requiring high-quality imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,459 parts In-Stock

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Vyrian

USA . 268 parts In-Stock

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Kulean Microsystems

USA . 8,322 parts In-Stock

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Problanco Electronics

Mexico . 5,714 parts In-Stock

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TANS Electronics

Latvia . 3,612 parts In-Stock

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SupplyDigital Components

Austria . 2,554 parts In-Stock

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Corphita

USA . 1,810 parts In-Stock

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Corohmni

South Africa . 480 parts In-Stock

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UHIMA Technologies

Türkiye . 104 parts In-Stock

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Overview

Unlock the potential of your imaging projects with the KAI-0340-AAA-CP-AA Image Sensor by Onsemi. Designed with precision and excellence, this sensor offers unparalleled quality and reliability for a wide range of applications. From industrial automation to medical imaging, this sensor provides exceptional performance and accuracy, ensuring that your projects are executed flawlessly. Experience the value and benefits of cutting-edge technology with the KAI-0340-AAA-CP-AA, setting new standards in imaging solutions. Trust Onsemi to deliver superior products that exceed expectations.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

The small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 15.25 V

With a high maximum supply voltage, this image sensor can handle a wide range of power inputs.

Body Width: 12.45 inch

The compact body width makes this image sensor suitable for applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD image sensors are known for their high-quality image capture capabilities and low noise performance.

Body Height: 5.15 mm

The low body height allows for easy integration into various devices or systems.

Package Shape or Style: RECTANGULAR

The rectangular package shape provides convenient mounting and alignment options.

Minimum Supply Voltage: 14.75 V

The low minimum supply voltage helps in reducing power consumption.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this image sensor can perform reliably in various environmental conditions.

Horizontal Pixel: 640

A high horizontal pixel count translates to better image quality and sharper details.

Output Type: ANALOG VOLTAGE

Analog voltage output simplifies interfacing with other components or systems.

Minimum Operating Temperature: -50 °C

The wide operating temperature range enables this image sensor to be used in extreme cold environments.

Maximum Operating Current: 2.5 mA

With a low operating current, this image sensor helps in reducing overall power consumption of the system.

Housing: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed housing protects the internal components from external elements and ensures durability.

Dynamic Range: 62 dB

A high dynamic range enables this image sensor to capture a wide range of light intensities accurately.

Vertical Pixel: 480

The vertical pixel count contributes to the overall image resolution and detail.

Body Length/Diameter: 15.87 mm

The compact body length makes this image sensor suitable for applications where space is limited.

Optical Format (inch): 1/3

The 1/3 inch optical format is a common standard and ensures compatibility with various lenses and imaging systems.

Termination Type: SOLDER

Solder termination provides a reliable and secure connection for the image sensor.

Array Type: INTERLINE

Interline array type offers high-speed image capture and reduced image lag.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting allows for easy and secure installation of the image sensor on a circuit board or PCB.

Technical Specifications

Image Sensors KAI-0340-AAA-CP-AA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

INTERLINE

Body Width:

12.45 inch

Body Height:

5.15 mm

Body Length/Diameter:

15.87 mm

Dynamic Range:

62 dB

Horizontal Pixel:

640

Housing:

CERAMIC, GLASS-SEALED

Mounting Feature:

Maximum Operating Current:

2.5 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1/3

Output Type:

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.25 V

Minimum Supply Voltage:

14.75 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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