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NOIP1SP0480A-STI

Onsemi

NOIP1SP0480A-STI by Onsemi

NOIP1SP0480A-STI by Onsemi is an image sensor with 4.80x4.80 um pixel size, 68 MHz master clock, and 808 (H) x 608 (V) resolution. It operates b/w -40 to 85 °C and has a dynamic range of 59 dB. Ideal for applications requiring high-speed imaging in compact devices.

Median Price

$24.790

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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DigiKey

USA . 329 parts In-Stock

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$27.910

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$22.285

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Mouser Electronics

USA . 100 parts In-Stock

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$21.670

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Digiode

USA . 2,451 parts In-Stock

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$33.345

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Vyrian

USA . 6,919 parts In-Stock

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Flip Electronics

USA . 300 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Ampacity Inc.

Singapore . 442 parts In-Stock

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$23.720

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Corphita

USA . 565 parts In-Stock

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$31.590

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Corohmni

South Africa . 488 parts In-Stock

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$35.100

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TANS Electronics

Latvia . 6,548 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Problanco Electronics

Mexico . 3,908 parts In-Stock

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SupplyDigital Components

Austria . 2,052 parts In-Stock

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Kulean Microsystems

USA . 484 parts In-Stock

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UHIMA Technologies

Türkiye . 283 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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Overview

Capture every moment with the NOIP1SP0480A-STI image sensor by Onsemi. Known for their high-quality products, Onsemi delivers cutting-edge technology that surpasses industry standards. This sensor is perfect for a wide range of applications, from security cameras to drones, offering unparalleled performance and reliability. With a maximum supply voltage of 1.9V and a dynamic range of 59dB, this sensor provides crystal-clear images with exceptional detail. Trust Onsemi to provide you with the best in image sensor technology.

Feature Benefit Bullets

Pixel Size (um): 4.80X4.80

Higher pixel size allows for better light sensitivity and image quality, making this image sensor suitable for capturing clear, detailed images.

Maximum Supply Voltage: 1.9 V

The higher maximum supply voltage provides flexibility in power supply options and can support efficient operation of the image sensor.

Master Clock: 68 MHz

The high master clock frequency of 68 MHz enables fast and precise data processing, resulting in quick and accurate image capture.

Body Width: 4.93 inch

Compact body width of 4.93 inches makes the image sensor suitable for integration into various devices without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Utilizing CMOS technology ensures low power consumption, high speed, and high sensitivity, making it an efficient choice for image sensing applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this image sensor can withstand high temperature environments, increasing its durability and reliability.

Minimum Operating Temperature: -40 °C

The wide range of minimum operating temperature from -40°C ensures the image sensor can function effectively in extreme cold conditions.

Package Shape or Style: RECTANGULAR

The rectangular package shape provides easy integration and alignment during manufacturing processes, enhancing the overall efficiency of production.

Output Interface Type: 4-WIRE INTERFACE

The 4-wire interface simplifies connectivity and communication with external devices, enabling seamless data transfer and integration into various systems.

Frame Rate: 120 fps

With a high frame rate of 120 frames per second, this image sensor can capture fast-moving subjects with smooth and clear motion, making it ideal for applications requiring high-speed imaging.

Technical Specifications

Image Sensors NOIP1SP0480A-STI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3V NOMINAL SUPPLY VOLTAGE; IT ALSO HAVE MASTER CLOCK 340 MHZ (10-BIT) AND 272 MHZ (8-BIT) WHEN PLL IS NOT USED

Array Type:

FULL FRAME

Body Width:

4.93 inch

Body Height:

.75 mm

Body Length/Diameter:

6.13 mm

Data Rate:

68 Mbps

Dynamic Range:

59 dB

Frame Rate:

120 fps

Horizontal Pixel:

808

JESD-609 Code:

e1

Master Clock:

68 MHz

Mounting Feature:

Maximum Operating Current:

59 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3.6

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

608

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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