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11KAI-04070-CBA-JD-BA

Onsemi

11KAI-04070-CBA-JD-BA by Onsemi

The Onsemi 11KAI-04070-CBA-JD-BA is an image sensor with 2048x2048 pixels, 7.4um pixel size, and 70.5dB dynamic range. It operates b/w -50 to 70 °C, suitable for industrial imaging applications requiring high-resolution and low-light performance. The rectangular package style with through-hole mounting makes it easy to integrate into various systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,455 parts In-Stock

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Vyrian

USA . 239 parts In-Stock

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TANS Electronics

Latvia . 7,365 parts In-Stock

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Kulean Microsystems

USA . 3,803 parts In-Stock

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Problanco Electronics

Mexico . 3,291 parts In-Stock

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Native Components

USA . 896 parts In-Stock

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Corphita

USA . 796 parts In-Stock

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Northwest PG Solutions

USA . 788 parts In-Stock

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UHIMA Technologies

Türkiye . 203 parts In-Stock

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Corohmni

South Africa . 117 parts In-Stock

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SupplyDigital Components

Austria . 65 parts In-Stock

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Overview

Experience the unparalleled quality and performance of the Onsemi 11KAI-04070-CBA-JD-BA Image Sensor. Manufactured by industry leader Onsemi, this sensor offers state-of-the-art technology for a wide range of applications. With a pixel size of 7.4X7.4 um and a dynamic range of 70.5 dB, this sensor provides crystal-clear imaging in various conditions. Whether you're in the automotive, medical, or security industry, this sensor delivers exceptional value and benefits to meet your needs. Upgrade your imaging system today with the Onsemi 11KAI-04070-CBA-JD-BA Image Sensor.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Higher pixel size allows more light to be captured, resulting in better image quality.

Maximum Supply Voltage: 15.5 V

Higher supply voltage provides more power for the sensor to operate efficiently.

Body Width: 29 inch

Compact body width makes it suitable for various applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Uses CCD technology which is known for producing high-quality images with low noise levels.

Body Height: 3 mm

Low body height allows for easy integration into different devices or systems.

Package Shape or Style: RECTANGULAR

Rectangular shape provides a standard form factor for easy mounting and compatibility.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage ensures efficient operation even with lower power sources.

Maximum Operating Temperature: 70 °C

Wide operating temperature range allows for use in various environmental conditions.

Horizontal Pixel: 2048

High resolution horizontal pixels provide detailed images with sharp clarity.

Minimum Operating Temperature: -50 °C

Can operate in extremely cold temperatures without performance issues.

Maximum Operating Current: 11 mA

Low operating current helps in energy efficiency and longer battery life.

Dynamic Range: 70.5 dB

Wide dynamic range captures both dark and bright areas in the same image without losing detail.

Vertical Pixel: 2048

High resolution vertical pixels provide detailed images with sharp clarity.

Body Length/Diameter: 40 mm

Optimal body length for easy integration into various devices or systems.

Optical Format (inch): 4/3

Standard optical format for compatibility with different lenses and imaging systems.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections for long-term use.

Frame Rate: 28 fps

High frame rate enables smooth video recording and real-time imaging.

Array Type: INTERLINE

Interline array type provides faster readout speeds for capturing moving objects.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature makes it easy to install and secure the sensor in place.

Technical Specifications

Image Sensors 11KAI-04070-CBA-JD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 8.7 MICRO VOLT PER ELECTRON LOW, 33 MICRO VOLT PER ELECTRON HIGH

Array Type:

INTERLINE

Body Width:

29 inch

Body Height:

3 mm

Body Length/Diameter:

40 mm

Dynamic Range:

70.5 dB

Frame Rate:

28 fps

Horizontal Pixel:

2048

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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