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11KAI-04070-CBA-JD-AE

Onsemi

11KAI-04070-CBA-JD-AE by Onsemi

The Onsemi 11KAI-04070-CBA-JD-AE is an image sensor with 2048x2048 pixels, 7.4um pixel size, and 70.5dB dynamic range. It operates b/w -50 to 70 °C, with a max supply voltage of 15.5V. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,127 parts In-Stock

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Vyrian

USA . 1,874 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 497 parts In-Stock

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$14.048

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497

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Northwest PG Solutions

USA . 942 parts In-Stock

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$15.453

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$13.908

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942

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Problanco Electronics

Mexico . 7,700 parts In-Stock

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7,700

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TANS Electronics

Latvia . 6,542 parts In-Stock

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Kulean Microsystems

USA . 5,064 parts In-Stock

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Corphita

USA . 2,378 parts In-Stock

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SupplyDigital Components

Austria . 1,503 parts In-Stock

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Corohmni

South Africa . 452 parts In-Stock

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UHIMA Technologies

Türkiye . 203 parts In-Stock

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Overview

Capture every detail with the Onsemi 11KAI-04070-CBA-JD-AE Image Sensor. Manufactured by Onsemi, a trusted name in quality imaging technology, this sensor offers unparalleled clarity and precision in a compact design. Ideal for applications in surveillance, automotive, and industrial imaging, this sensor provides excellent value with its high dynamic range and fast frame rate. Upgrade your imaging system today with the Onsemi 11KAI-04070-CBA-JD-AE Image Sensor.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Small pixel size allows for high resolution imaging and better image quality.

Maximum Supply Voltage: 15.5 V

Wide range of supply voltage allows for flexibility in different power supply configurations.

Body Width: 29 inch

Compact body size makes it suitable for integration into different devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensor type ensures high quality and accurate image capture.

Body Height: 3 mm

Low profile design enables easy integration into space-constrained applications.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for efficient and space-saving placement within a device.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage helps in reducing power consumption and heat generation.

Maximum Operating Temperature: 70 °C

Wide operating temperature range makes the sensor suitable for use in various environments.

Horizontal Pixel: 2048

High pixel count provides detailed and sharp images.

Minimum Operating Temperature: -50 °C

Suitable for use in extreme weather conditions or cold environments.

Maximum Operating Current: 11 mA

Low operating current helps in minimizing power consumption.

Dynamic Range: 70.5 dB

Wide dynamic range allows for capturing scenes with both bright and dark areas accurately.

Vertical Pixel: 2048

High vertical pixel count ensures detailed images in both horizontal and vertical directions.

Body Length/Diameter: 40 mm

Compact body size for easy integration into different applications.

Optical Format (inch): 4/3

Standard optical format for compatibility with various lenses and imaging systems.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection.

Frame Rate: 28 fps

Decent frame rate for capturing fast-moving objects or video recording.

Array Type: INTERLINE

Interline array design helps in reducing blooming and smearing effects in images.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting allows for easy and secure installation in a circuit board.

Technical Specifications

Image Sensors 11KAI-04070-CBA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 8.7 MICRO VOLT PER ELECTRON LOW, 33 MICRO VOLT PER ELECTRON HIGH

Array Type:

INTERLINE

Body Width:

29 inch

Body Height:

3 mm

Body Length/Diameter:

40 mm

Dynamic Range:

70.5 dB

Frame Rate:

28 fps

Horizontal Pixel:

2048

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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