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11KAI-04070-QBA-JD-AE

Onsemi

11KAI-04070-QBA-JD-AE by Onsemi

Onsemi's 11KAI-04070-QBA-JD-AE is a CCD image sensor with 2048x2048 pixels, 7.4um pixel size, and 70.5dB dynamic range. Ideal for applications requiring high-resolution imaging in industrial cameras or scientific instruments due to its rectangular package style and through-hole mounting feature.

Median Price

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Lifecycle Status

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1k+

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Digiode

USA . 2,144 parts In-Stock

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Vyrian

USA . 632 parts In-Stock

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Native Components

USA . 277 parts In-Stock

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$5.005

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SupplyDigital Components

Austria . 8,003 parts In-Stock

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Problanco Electronics

Mexico . 7,780 parts In-Stock

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Kulean Microsystems

USA . 7,535 parts In-Stock

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TANS Electronics

Latvia . 3,368 parts In-Stock

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UHIMA Technologies

Türkiye . 736 parts In-Stock

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Corohmni

South Africa . 323 parts In-Stock

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Northwest PG Solutions

USA . 298 parts In-Stock

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Corphita

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Overview

Capture the essence of every moment with the Onsemi 11KAI-04070-QBA-JD-AE image sensor. Manufactured by Onsemi, a trusted name in quality imaging technology, this sensor offers unparalleled performance and reliability. Ideal for a wide range of applications, this sensor delivers crystal-clear images with exceptional detail and accuracy. Elevate your projects with the superior quality and precision of Onsemi's image sensors.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

This small pixel size allows for high resolution image capture, making this image sensor suitable for high quality imaging applications.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage provides flexibility in power supply options and ensures stable operation of the image sensor.

Body Width: 29 inch

The compact body width of 29 inches allows for easy integration into various imaging systems without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality image output and low noise performance, making this product a reliable choice for imaging applications.

Package Shape or Style: RECTANGULAR

The rectangular package shape makes it easy to mount and align the image sensor within imaging systems, ensuring proper functionality.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage ensures that the image sensor can operate efficiently even with lower power supply options, making it versatile for different applications.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature allows for reliable operation in environments with elevated temperatures, enhancing the product's durability.

Horizontal Pixel: 2048

With 2048 horizontal pixels, this image sensor can capture detailed images with high resolution, making it suitable for demanding imaging applications.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature ensures that the image sensor can function in cold environments without any performance issues, increasing its usability in various conditions.

Maximum Operating Current: 11 mA

The low maximum operating current helps in reducing power consumption, making this image sensor energy efficient and cost-effective in the long run.

Dynamic Range: 70.5 dB

A high dynamic range of 70.5 dB allows the image sensor to capture images with a wide range of brightness levels, resulting in high-quality and well-exposed images.

Vertical Pixel: 2048

With 2048 vertical pixels, this image sensor can capture detailed images with high resolution, ensuring sharp and clear image output.

Body Length/Diameter: 40 mm

The compact body length of 40 mm allows for easy integration and alignment within imaging systems, making this image sensor a practical choice for various applications.

Optical Format (inch): 4/3

The 4/3 optical format is a common industry standard, ensuring compatibility with a wide range of imaging systems and accessories for seamless integration.

Termination Type: SOLDER

The solder termination type simplifies the installation and connection process of the image sensor, making it easy to integrate into imaging systems with standard soldering techniques.

Frame Rate: 28 fps

A frame rate of 28 fps allows for smooth and real-time image capture, making this image sensor suitable for applications that require high-speed image processing.

Array Type: INTERLINE

Interline array type offers fast readout speeds and low noise performance, making this product ideal for applications that require quick and accurate image capture.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount feature simplifies the installation process and ensures secure mounting of the image sensor within imaging systems, reducing the risk of displacement or misalignment.

Technical Specifications

Image Sensors 11KAI-04070-QBA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 8.7 MICRO VOLT PER ELECTRON LOW, 33 MICRO VOLT PER ELECTRON HIGH

Array Type:

INTERLINE

Body Width:

29 inch

Body Height:

3 mm

Body Length/Diameter:

40 mm

Dynamic Range:

70.5 dB

Frame Rate:

28 fps

Horizontal Pixel:

2048

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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