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KAI-4021-ABA-CR-AE

Onsemi

KAI-4021-ABA-CR-AE by Onsemi

KAI-4021-ABA-CR-AE by Onsemi is a 2048x2048 CCD image sensor with 7.4um pixel size and 60dB dynamic range. It operates b/w -50 °C to 70°C, making it suitable for industrial imaging applications requiring high-resolution and low-light performance. The sensor comes in a rectangular ceramic housing with through-hole mounting, offering a data rate of 40 Mbps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,576 parts In-Stock

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Vyrian

USA . 651 parts In-Stock

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TANS Electronics

Latvia . 5,669 parts In-Stock

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Problanco Electronics

Mexico . 5,584 parts In-Stock

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SupplyDigital Components

Austria . 3,871 parts In-Stock

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Kulean Microsystems

USA . 1,988 parts In-Stock

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Corphita

USA . 776 parts In-Stock

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Corohmni

South Africa . 258 parts In-Stock

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UHIMA Technologies

Türkiye . 115 parts In-Stock

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Overview

Unleash the power of superior imaging with the KAI-4021-ABA-CR-AE by Onsemi. This innovative image sensor offers unparalleled quality and reliability, backed by the renowned manufacturer Onsemi. Ideal for applications in industries such as surveillance, automotive, and medical imaging, this product provides customers with exceptional value, delivering crisp and clear images with a wide dynamic range. Elevate your imaging capabilities with the KAI-4021-ABA-CR-AE and experience the advantage of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Smaller pixel size allows for higher resolution images, making this sensor ideal for applications requiring detailed image capture.

Body Width: 25.4 inch

The compact body width of the sensor allows for easy integration into various systems and devices without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD image sensors are known for their high-quality imaging capabilities, making this sensor suitable for applications where image quality is crucial.

Body Height: 4.95 mm

The low profile of the sensor makes it suitable for applications where space is limited, such as in compact cameras or medical devices.

Package Shape or Style: RECTANGULAR

The rectangular shape of the sensor makes it easy to mount and integrate into different systems, providing flexibility in design.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this sensor can withstand harsh environmental conditions, making it suitable for outdoor or industrial applications.

Horizontal Pixel: 2048

The high horizontal pixel count allows for detailed image capture and sharpness, making this sensor ideal for applications requiring high-resolution images.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature ensures that the sensor can perform reliably in different temperature conditions, making it suitable for a wide range of applications.

Housing: CERAMIC

The ceramic housing provides durability and thermal stability, making the sensor reliable and long-lasting in demanding environments.

Dynamic Range: 60 dB

A high dynamic range enables the sensor to capture a wide range of light intensities accurately, making it suitable for applications with varying lighting conditions.

Vertical Pixel: 2048

The high vertical pixel count ensures detailed image capture in both horizontal and vertical directions, making this sensor suitable for various imaging applications.

Body Length/Diameter: 35.56 mm

The moderate body length/diameter allows for easy integration and mounting of the sensor in different systems and devices.

Data Rate: 40 Mbps

A high data rate enables fast image transfer, making this sensor suitable for real-time imaging applications that require quick data processing.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection, ensuring stable operation of the sensor in various conditions.

Array Type: INTERLINE

Interline array type allows for faster readout speed and reduced image lag, making this sensor suitable for applications requiring high-speed image capture.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature provides secure and stable mounting of the sensor, making it ideal for applications where vibration or movement is present.

Technical Specifications

Image Sensors KAI-4021-ABA-CR-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 31 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

25.4 inch

Body Height:

4.95 mm

Body Length/Diameter:

35.56 mm

Data Rate:

40 Mbps

Dynamic Range:

60 dB

Horizontal Pixel:

2048

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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