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MT9M413C36STM

Onsemi

MT9M413C36STM by Onsemi

The Onsemi MT9M413C36STM is a 12x12 um CMOS image sensor with 1280H x 1024V pixels. Operating at 66 MHz, it has a max supply voltage of 3.6 V and frame rate of 500 fps. Ideal for applications requiring high-resolution imaging in industrial automation and surveillance systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 3,862 parts In-Stock

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Vyrian

USA . 607 parts In-Stock

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Problanco Electronics

Mexico . 4,735 parts In-Stock

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Corphita

USA . 3,602 parts In-Stock

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SupplyDigital Components

Austria . 2,503 parts In-Stock

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Kulean Microsystems

USA . 426 parts In-Stock

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UHIMA Technologies

Türkiye . 267 parts In-Stock

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Corohmni

South Africa . 181 parts In-Stock

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TANS Electronics

Latvia . 169 parts In-Stock

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Overview

Capture every moment with the MT9M413C36STM by Onsemi, a top-of-the-line image sensor designed to deliver unparalleled quality and performance. Manufactured by Onsemi, a trusted name in the industry, this sensor is perfect for a wide range of applications. From surveillance systems to automotive cameras, this sensor offers exceptional value, benefits, and advantages to customers looking for high-quality imaging solutions. Don't settle for anything less than the best - choose the MT9M413C36STM for all your imaging needs.

Feature Benefit Bullets

Pixel Size (um): 12X12

Smaller pixel size allows for higher resolution images to be captured with more detail.

Maximum Supply Voltage: 3.6 V

Allows for flexibility in power supply options and can accommodate a higher voltage for optimal performance.

Master Clock: 66 MHz

High master clock speed ensures fast data processing and efficient operation.

Power Supplies (V): 3.3

Standard power supply voltage for compatibility with common power sources.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors offer good image quality, low power consumption, and high speed operation.

Minimum Supply Voltage: 3 V

Low minimum supply voltage ensures efficient power usage and compatibility with various systems.

Maximum Operating Temperature: 60 °C

High maximum operating temperature allows for operation in a wide range of environments.

Horizontal Pixel: 1280

Higher horizontal pixel count results in sharper and more detailed images.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies integration with digital systems and reduces signal interference.

Minimum Operating Temperature: -5 °C

Low minimum operating temperature ensures reliable operation even in cold conditions.

Maximum Operating Current: 165 mA

Moderate operating current consumption for efficient power usage and longer battery life.

Housing: CERAMIC

Ceramic housing provides durability and thermal stability for long-lasting performance.

Dynamic Range: 59 dB

High dynamic range allows for capturing images with a wide range of brightness levels and contrasts.

Vertical Pixel: 1024

Higher vertical pixel count enhances image quality and resolution for better visual representation.

Termination Type: SOLDER

Solder termination offers secure and reliable connections for stable performance.

Frame Rate: 500 fps

High frame rate enables capturing fast-moving objects with clarity and smoothness.

Array Type: FRAME

Frame array type allows for capturing complete images at once, making it suitable for various applications.

Mounting Feature: SURFACE MOUNT

Surface mount feature offers easy and efficient installation on PCBs for streamlined production processes.

Technical Specifications

Image Sensors MT9M413C36STM attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC SHUTTER

Array Type:

FRAME

Dynamic Range:

59 dB

Frame Rate:

500 fps

Horizontal Pixel:

1280

Housing:

CERAMIC

Master Clock:

66 MHz

Mounting Feature:

Maximum Operating Current:

165 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-5 Cel

Optical Format (inch):

1

Output Type:

Pixel Size (um):

12X12

Power Supplies (V):

3.3

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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