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MT9M001C12STM-DR1

Onsemi

MT9M001C12STM-DR1 by Onsemi

Onsemi's MT9M001C12STM-DR1 image sensor features 5.2x5.2 um pixel size, 3V to 3.6V supply voltage range, and 48 MHz master clock. Ideal for digital cameras, surveillance systems, and industrial imaging applications due to its high resolution of 1280x1024 pixels and square package style with a ceramic housing.

Median Price

$28.300

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 2 parts In-Stock

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$28.300

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Distributors (In-Stock)

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Nova Conductors

Japan . 63 parts In-Stock

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$24.475

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63

$24.475

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Digiode

USA . 943 parts In-Stock

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$26.885

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943

$26.885

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Bristol Electronics

USA . 25,056 parts In-Stock

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Vyrian

USA . 4,616 parts In-Stock

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Cyclops Electronics Ltd

UK . 480 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,753 parts In-Stock

1+ parts

$1.860

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$1.860

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AZTECH Wire

Italy . 773 parts In-Stock

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$9.160

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773

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Corohmni

South Africa . 380 parts In-Stock

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$23.985

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$23.985

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Ampacity Inc.

Singapore . 2 parts In-Stock

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$24.050

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Semicontronic

India . 2 parts In-Stock

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$24.050

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$23.449

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$23.328

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$24.050

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Netroflash

USA . 500 parts In-Stock

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$24.475

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$24.475

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Continental Prestige Electronics

USA . 170 parts In-Stock

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$24.475

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$23.985

170

$24.475

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Corphita

USA . 1,534 parts In-Stock

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$25.470

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SupplyDigital Components

Austria . 7,260 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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TANS Electronics

Latvia . 6,246 parts In-Stock

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Problanco Electronics

Mexico . 5,655 parts In-Stock

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Argo Parts USA

USA . 3,320 parts In-Stock

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Kulean Microsystems

USA . 1,701 parts In-Stock

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UHIMA Technologies

Türkiye . 413 parts In-Stock

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Overview

Experience top-notch image quality with the MT9M001C12STM-DR1 by Onsemi, a leader in image sensor technology. This cutting-edge CMOS sensor offers unparalleled performance for a wide range of applications. From crystal-clear surveillance footage to high-resolution medical imaging, this sensor delivers exceptional results. Trust Onsemi for reliable and innovative solutions that exceed your expectations. Elevate your projects with the MT9M001C12STM-DR1 and unlock a world of possibilities.

Feature Benefit Bullets

Pixel Size (um): 5.2X5.2

Smaller pixel size allows for higher resolution and better image quality.

Maximum Supply Voltage: 3.6 V

Higher maximum supply voltage ensures stability and reliability of the image sensor.

Master Clock: 48 MHz

High master clock frequency enables faster processing of image data.

Body Width: 14.22 inch

Compact body width makes it suitable for space-constrained applications.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS sensors offer low power consumption and high sensitivity, ideal for imaging applications.

Package Shape or Style: SQUARE

Square package shape allows for easy integration into various system designs.

Minimum Supply Voltage: 3 V

Low minimum supply voltage helps in reducing power consumption.

Maximum Operating Temperature: 70 °C

Wide operating temperature range ensures reliability in different environmental conditions.

Horizontal Pixel: 1280

Higher horizontal pixel count provides better image resolution and detail.

Output Type: DIGITAL VOLTAGE

Digital output type simplifies integration with digital systems and reduces noise interference.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures functionality even in cold environments.

Maximum Operating Current: 110 mA

Low operating current makes the sensor energy-efficient.

Housing: CERAMIC

Ceramic housing provides durability and protection for the image sensor.

Dynamic Range: 68.2 dB

High dynamic range allows for capturing details in both bright and dark areas of an image.

Vertical Pixel: 1024

Higher vertical pixel count enhances image quality and sharpness.

Body Length/Diameter: 14.22 mm

Compact body size for easy mounting and integration in various devices.

Optical Format (inch): 1/2

Standard optical format allows for compatibility with different lenses and optical systems.

Termination Type: SOLDER

Solder termination provides a secure connection for reliable performance.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies communication with external devices and reduces complexity.

Frame Rate: 30 fps

High frame rate enables smooth real-time image capture.

Array Type: FRAME

Frame array type allows for capturing full frames of image data for processing.

Mounting Feature: SURFACE MOUNT

Surface mounting feature simplifies installation and ensures secure placement.

Technical Specifications

Image Sensors MT9M001C12STM-DR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

14.22 inch

Body Height:

2.21 mm

Body Length/Diameter:

14.22 mm

Dynamic Range:

68.2 dB

Frame Rate:

30 fps

Horizontal Pixel:

1280

Housing:

CERAMIC

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

110 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1/2

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

5.2X5.2

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

1024

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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