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MT9V138D00STCK22BC1-200

Onsemi

MT9V138D00STCK22BC1-200 by Onsemi

MT9V138D00STCK22BC1-200 by Onsemi is an image sensor with 5.60X5.60 um pixel size, 27 MHz master clock, and 680 horizontal pixels. It operates b/w -30 to 70 °C and has a dynamic range of 74.8 dB. Ideal for digital cameras, surveillance systems, and automotive applications due to its high-quality imaging capabilities at a max supply voltage of 1.9 V.

Median Price

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Lifecycle Status

Suppliers In-Stock

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1k+

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Vyrian

USA . 2,464 parts In-Stock

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Digiode

USA . 1,059 parts In-Stock

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Kulean Microsystems

USA . 6,544 parts In-Stock

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Problanco Electronics

Mexico . 3,177 parts In-Stock

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SupplyDigital Components

Austria . 1,851 parts In-Stock

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Corphita

USA . 1,782 parts In-Stock

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TANS Electronics

Latvia . 770 parts In-Stock

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Corohmni

South Africa . 421 parts In-Stock

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UHIMA Technologies

Türkiye . 76 parts In-Stock

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Overview

Capture stunning images with the Onsemi MT9V138D00STCK22BC1-200 Image Sensor. Known for their high-quality products, Onsemi delivers superior performance and reliability. This sensor is perfect for a wide range of applications, from security cameras to medical imaging. Experience crystal-clear images with the MT9V138D00STCK22BC1-200, offering exceptional value and cutting-edge technology. Elevate your projects with this innovative sensor from Onsemi.

Feature Benefit Bullets

Pixel Size (um): 5.60X5.60

The small pixel size allows for high-resolution image capture, resulting in clear and sharp images.

Maximum Supply Voltage: 1.9 V

The low maximum supply voltage helps in reducing power consumption and increasing the efficiency of the sensor.

Master Clock: 27 MHz

The high master clock frequency ensures fast and efficient data processing, enabling real-time image capture.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption, high sensitivity, and noise reduction capabilities.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage further contributes to the sensor's energy efficiency and longevity.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature ensures reliability and longevity even in harsh environments.

Horizontal Pixel: 680

The high number of horizontal pixels enables high-resolution and detailed image capture.

Output Range: -0.30-2.80V

The wide output range provides flexibility in adjusting the output signal levels to suit various applications.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies integration with digital systems and reduces signal interference.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature ensures functionality even in cold conditions.

Maximum Operating Current: 50 mA

The low maximum operating current contributes to the sensor's energy efficiency and reduces heat generation.

Dynamic Range: 74.8 dB

The high dynamic range allows the sensor to capture a wide range of light intensities, resulting in detailed images with accurate color representation.

Vertical Pixel: 512

The high number of vertical pixels enables capturing images with high resolution and clarity.

Optical Format (inch): 1/4

The 1/4 inch optical format is commonly used in compact digital cameras and webcams, providing a good balance between size and performance.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies the process of connecting the sensor to external devices, enabling easy integration and communication.

Frame Rate: 30 fps

The high frame rate of 30 frames per second allows for smooth and fluid video recording and playback.

Array Type: FRAME

The frame array type enables capturing multiple frames in a single image, providing more information and details for analysis and processing.

Technical Specifications

Image Sensors MT9V138D00STCK22BC1-200 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.66-2.94 V

Array Type:

FRAME

Dynamic Range:

74.8 dB

Frame Rate:

30 fps

Horizontal Pixel:

680

Master Clock:

27 MHz

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Pixel Size (um):

5.60X5.60

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Vertical Pixel:

512

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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