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MT9V034C12STM-DP1

Onsemi

MT9V034C12STM-DP1 by Onsemi

The Onsemi MT9V034C12STM-DP1 is a 1/3 inch CMOS image sensor with a pixel size of 6X6 um. It operates at a max supply voltage of 3.6 V and has a master clock frequency of 27 MHz. This sensor is commonly used in applications requiring high-resolution imaging at a frame rate of 60 fps.

Median Price

$21.000

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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DigiKey

USA . 11 parts In-Stock

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$21.000

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Flip Electronics (Authorized)

USA . 304 parts In-Stock

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Nova Conductors

Japan . 84 parts In-Stock

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$17.604

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Vyrian

USA . 4,921 parts In-Stock

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Digiode

USA . 1,703 parts In-Stock

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Flip Electronics

USA . 304 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$1.887

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$1.793

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$1.793

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$1.887

$1.793

$1.793

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Aztec Data Supply Inc.

USA . 2,287 parts In-Stock

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$2.840

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$2.840

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Corohmni

South Africa . 152 parts In-Stock

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$16.198

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Continental Prestige Electronics

USA . 6,081 parts In-Stock

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$17.604

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$17.252

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Netroflash

USA . 1,000 parts In-Stock

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$17.604

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$17.252

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$17.604

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Semicontronic

India . 158 parts In-Stock

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$17.850

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$17.404

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$17.314

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$17.850

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$17.314

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AZTECH Wire

Italy . 287 parts In-Stock

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$17.879

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Ampacity Inc.

Singapore . 158 parts In-Stock

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$38.850

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Authorized Procurement Solutions

USA . 18,000 parts In-Stock

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Kulean Microsystems

USA . 4,947 parts In-Stock

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SupplyDigital Components

Austria . 4,785 parts In-Stock

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Problanco Electronics

Mexico . 4,703 parts In-Stock

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Corphita

USA . 2,265 parts In-Stock

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TANS Electronics

Latvia . 1,846 parts In-Stock

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Argo Parts USA

USA . 1,563 parts In-Stock

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UHIMA Technologies

Türkiye . 865 parts In-Stock

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Overview

Discover the MT9V034C12STM-DP1, the cutting-edge image sensor by Onsemi. With its impressive pixel size of 6X6 um and maximum supply voltage of 3.6V, this CMOS sensor guarantees exceptional image quality. Whether you're in the surveillance, automotive, or consumer electronics industry, this square-shaped sensor will elevate your products to new heights. Boasting a dynamic range of 100dB and sensitivity of 4.8V/lx.s, it captures every detail with stunning accuracy. Experience the value and benefits that Onsemi delivers, providing you with a reliable and innovative solution for all your imaging needs.

Feature Benefit Bullets

Pixel Size (um) 6X6

Small pixel size allows for high resolution images with fine details.

Maximum Supply Voltage 3.6 V

Efficient power usage and compatibility with standard power supply voltages.

Master Clock 27 MHz

High master clock frequency enables fast data processing and high frame rates.

Body Width 11.43 inch

Compact size for easy integration into different applications.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS image sensor technology offers low power consumption and high image quality.

Body Height 2.3 mm

Low profile design for space-constrained installations.

Package Shape or Style SQUARE

Square package shape for efficient use of space on circuit boards.

Minimum Supply Voltage 3 V

Wide range of supply voltage allows for flexibility in power source selection.

Maximum Operating Temperature 70 °C

High maximum operating temperature for reliability in various environmental conditions.

Horizontal Pixel 752

High resolution horizontal pixel count for detailed images.

Output Type DIGITAL CURRENT

Digital current output for easy integration with digital processing systems.

Minimum Operating Temperature -30 °C

Low minimum operating temperature for use in extreme cold environments.

Maximum Operating Current 60 mA

Low operating current for energy-efficient operation.

Dynamic Range 100 dB

Wide dynamic range for capturing both bright and dark scenes accurately.

Vertical Pixel 480

High resolution vertical pixel count for detailed images.

Body Length/Diameter 11.43 mm

Compact body size for versatile installation options.

Optical Format (inch) 1/3

Standard optical format for compatibility with a wide range of lenses.

Termination Type SOLDER

Solder termination for secure and reliable connection.

Output Interface Type 2-WIRE INTERFACE

2-wire interface for easy communication with external devices.

Frame Rate 60 fps

High frame rate for smooth video recording and real-time image acquisition.

Array Type FRAME

Frame array type for efficient image capture and processing.

Sensitivity (V/lx.s) 4.8 V/lx.s

High sensitivity for accurate image capture even in low light conditions.

Mounting Feature SURFACE MOUNT

Surface mounting feature for easy installation on PCBs.

Technical Specifications

Image Sensors MT9V034C12STM-DP1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

DUAL OUTPUT

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.3 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

100 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensitivity (V/lx.s):

4.8 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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