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CYIL1SE3000AA-GZDC

Onsemi

CYIL1SE3000AA-GZDC by Onsemi

CYIL1SE3000AA-GZDC by Onsemi is an 8x8 um CMOS image sensor with a max supply voltage of 3.465 V and a master clock of 206 MHz. It features a full-frame array type, digital output, and operates at temperatures ranging from 0 to 60 °C. Ideal for applications requiring high-speed imaging such as machine vision systems or industrial cameras.

Median Price

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2

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Digiode

USA . 2,069 parts In-Stock

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Vyrian

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Northwest PG Solutions

USA . 1,115 parts In-Stock

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Problanco Electronics

Mexico . 5,742 parts In-Stock

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SupplyDigital Components

Austria . 5,493 parts In-Stock

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Kulean Microsystems

USA . 5,241 parts In-Stock

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TANS Electronics

Latvia . 5,015 parts In-Stock

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Corphita

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Corohmni

South Africa . 237 parts In-Stock

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Native Components

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UHIMA Technologies

Türkiye . 116 parts In-Stock

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Overview

Elevate your imaging projects to the next level with the CYIL1SE3000AA-GZDC by Onsemi. As a leading manufacturer in image sensors, Onsemi delivers top-notch quality and reliability in every product they create. The CYIL1SE3000AA-GZDC offers unparalleled performance and versatility, making it ideal for a wide range of applications. From high-speed cameras to security systems, this image sensor provides exceptional value, benefits, and advantages that will take your projects to new heights. Explore the endless possibilities with the CYIL1SE3000AA-GZDC by Onsemi today.

Feature Benefit Bullets

Pixel Size (um): 8x8

Small pixel size allows for capturing detailed images with high resolution.

Maximum Supply Voltage: 3.465 V

Provides enough power for the sensor to function optimally without risking damage.

Master Clock: 206 MHz

High master clock frequency enables fast data processing and image capture.

Body Width: 27 inch

Compact size enables easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

Uses CMOS technology which is known for low power consumption and high image quality.

Body Height: 4.3 mm

Slim profile makes it suitable for applications where space is limited.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for efficient utilization of space during installation.

Minimum Supply Voltage: 3.135 V

Low minimum supply voltage ensures energy efficiency.

Maximum Operating Temperature: 60 °C

Wide operating temperature range enhances the sensor's versatility in different environments.

Horizontal Pixel: 1696

High horizontal pixel count results in detailed and sharp images.

Output Type: DIGITAL OUTPUT

Digital output simplifies data processing and transmission.

Minimum Operating Temperature: 0 °C

Can operate effectively in lower temperature conditions.

Housing: CERAMIC

Ceramic housing provides durability and reliable performance.

Dynamic Range: 80 dB

Wide dynamic range allows for capturing images with varying levels of brightness.

Vertical Pixel: 1710

High vertical pixel count enhances image quality and resolution.

Body Length/Diameter: 31 mm

Optimal size for easy installation and integration.

Termination Type: SOLDER

Solder termination ensures secure connection for stable operation.

Frame Rate: 485 fps

High frame rate enables capturing fast-moving objects with clarity.

Array Type: FULL FRAME

Full frame array provides detailed and comprehensive image capture.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting offers secure and stable installation.

Technical Specifications

Image Sensors CYIL1SE3000AA-GZDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ITS ALSO OPERATES 2.5V

Array Type:

FULL FRAME

Body Width:

27 inch

Body Height:

4.3 mm

Body Length/Diameter:

31 mm

Dynamic Range:

80 dB

Frame Rate:

485 fps

Horizontal Pixel:

1696

Housing:

CERAMIC

Master Clock:

206 MHz

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1

Output Type:

Package Shape or Style:

Pixel Size (um):

8X8

Sensors or Transducers Type:

Maximum Supply Voltage:

3.465 V

Minimum Supply Voltage:

3.135 V

Termination Type:

SOLDER

Vertical Pixel:

1710

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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