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CYIL1SE0300AA-QDC

Onsemi

CYIL1SE0300AA-QDC by Onsemi

Onsemi's CYIL1SE0300AA-QDC is a CMOS image sensor with 640x480 pixels, 80 MHz master clock, and 61 dB dynamic range. Ideal for applications requiring high-speed digital imaging in industrial automation, surveillance systems, and robotics due to its 250 fps frame rate and 80 Mbps data rate.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,426 parts In-Stock

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Digiode

USA . 2,187 parts In-Stock

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Northwest PG Solutions

USA . 714 parts In-Stock

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$3.315

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Kulean Microsystems

USA . 7,603 parts In-Stock

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SupplyDigital Components

Austria . 7,412 parts In-Stock

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Problanco Electronics

Mexico . 5,067 parts In-Stock

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TANS Electronics

Latvia . 4,429 parts In-Stock

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Native Components

USA . 640 parts In-Stock

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UHIMA Technologies

Türkiye . 512 parts In-Stock

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Corohmni

South Africa . 353 parts In-Stock

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Corphita

USA . 177 parts In-Stock

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Overview

Elevate your imaging projects with the CYIL1SE0300AA-QDC by Onsemi. As a leader in image sensor technology, Onsemi delivers unparalleled quality and reliability in every product. Perfect for applications in security cameras, automotive systems, and drones, this sensor offers exceptional performance and versatility. With a sleek design and advanced features, customers can expect superior results and seamless integration. Trust Onsemi to provide cutting-edge solutions that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Pixel Size (um): 9.9X9.9

Smaller pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage: 3.3 V

Operates at a safe voltage level to prevent damage to the sensor.

Master Clock: 80 MHz

High master clock speed enables fast data processing and high frame rates.

Body Width: 14.22 inch

Compact size for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer low power consumption and high image quality.

Body Height: 1.55 mm

Low profile design for space-constrained applications.

Package Shape or Style: SQUARE

Square shape allows for efficient use of space and easy mounting.

Minimum Supply Voltage: 2.5 V

Can operate at lower voltages for energy efficiency.

Maximum Operating Temperature: 70 °C

Can withstand high temperatures for reliable performance in various environments.

Horizontal Pixel: 640

High horizontal pixel count for detailed and sharp images.

Output Type: DIGITAL VOLTAGE

Digital output for easy integration with microcontrollers and processors.

Minimum Operating Temperature: -40 °C

Can operate in extremely low temperatures without issues.

Maximum Operating Current: 50 mA

Low operating current for energy-efficient operation.

Housing: CERAMIC

Durable ceramic housing for protection and reliability.

Dynamic Range: 61 dB

High dynamic range for capturing a wide range of light intensities.

Vertical Pixel: 480

Good vertical pixel count for well-proportioned images.

Body Length/Diameter: 14.22 mm

Compact design for easy integration and mounting.

Optical Format (inch): 1/2

Standard optical format for broad compatibility.

Data Rate: 80 Mbps

High data rate for quick transmission of image data.

Termination Type: SOLDER

Solder termination for secure and reliable connections.

Output Interface Type: 3-WIRE INTERFACE

3-wire interface for easy connection to other devices.

Frame Rate: 250 fps

High frame rate for capturing fast-moving objects with clarity.

Array Type: FULL FRAME

Full-frame array for capturing complete scenes without cropping.

Sensitivity (V/lx.s): 17 V/lx.s

High sensitivity for capturing images in low light conditions.

Mounting Feature: SURFACE MOUNT

Surface mountable for easy and secure installation on PCBs.

Technical Specifications

Image Sensors CYIL1SE0300AA-QDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC SNAPSHOT SHUTTER

Array Type:

FULL FRAME

Body Width:

14.22 inch

Body Height:

1.55 mm

Body Length/Diameter:

14.22 mm

Data Rate:

80 Mbps

Dynamic Range:

61 dB

Frame Rate:

250 fps

Horizontal Pixel:

640

Housing:

CERAMIC

Master Clock:

80 MHz

Mounting Feature:

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2

Output Interface Type:

3-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

9.9X9.9

Sensitivity (V/lx.s):

17 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

3.3 V

Minimum Supply Voltage:

2.5 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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