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CYIL1SM0300AA-QDC

Onsemi

CYIL1SM0300AA-QDC by Onsemi

CYIL1SM0300AA-QDC by Onsemi is an image sensor with 640x480 pixels, 9.9um pixel size, and 80MHz master clock. Ideal for applications requiring high-speed digital imaging in a compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,464 parts In-Stock

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Vyrian

USA . 833 parts In-Stock

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SupplyDigital Components

Austria . 6,174 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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TANS Electronics

Latvia . 2,675 parts In-Stock

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Northwest PG Solutions

USA . 1,758 parts In-Stock

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Kulean Microsystems

USA . 1,519 parts In-Stock

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Corphita

USA . 1,501 parts In-Stock

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Problanco Electronics

Mexico . 1,305 parts In-Stock

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Native Components

USA . 951 parts In-Stock

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UHIMA Technologies

Türkiye . 921 parts In-Stock

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RC Electronics

USA . 800 parts In-Stock

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Futuretech Components

Singapore . 328 parts In-Stock

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Corohmni

South Africa . 269 parts In-Stock

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Overview

Discover the cutting-edge CYIL1SM0300AA-QDC Image Sensor by Onsemi, designed to deliver top-notch quality and performance. This innovative sensor opens up a world of possibilities in various applications, from automotive to surveillance systems. With its advanced technology and superior manufacturing standards, this sensor offers unparalleled value and benefits to customers seeking high-resolution imaging solutions. Trust Onsemi for exceptional quality and reliability in image sensor technology.

Feature Benefit Bullets

Pixel Size (um): 9.9X9.9

Smaller pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage: 3.3 V

Higher supply voltage allows for faster operation and better performance.

Master Clock: 80 MHz

High master clock frequency enables fast data processing and image capture.

Body Width: 14.22 inch

Compact body size makes it easy to integrate into various devices or applications.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS image sensors are known for low power consumption and high image quality.

Maximum Operating Temperature: 70 °C

Wide operating temperature range allows for use in various environmental conditions.

Array Type: FULL FRAME

Full frame array provides high sensitivity and accurate image capture.

Technical Specifications

Image Sensors CYIL1SM0300AA-QDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC SNAPSHOT SHUTTER

Array Type:

FULL FRAME

Body Width:

14.22 inch

Body Height:

1.55 mm

Body Length/Diameter:

14.22 mm

Data Rate:

80 Mbps

Dynamic Range:

61 dB

Frame Rate:

250 fps

Horizontal Pixel:

640

Housing:

CERAMIC

Master Clock:

80 MHz

Mounting Feature:

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2

Output Interface Type:

3-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

9.9X9.9

Sensitivity (V/lx.s):

17 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

3.3 V

Minimum Supply Voltage:

2.5 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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