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CYIL2SM1300AA-GWCES

Onsemi

CYIL2SM1300AA-GWCES by Onsemi

Onsemi's CYIL2SM1300AA-GWCES is a 14x14 um CMOS image sensor with 1280x1024 pixels. It operates at 315 MHz, offers a dynamic range of 90 dB, and has a frame rate of 500 fps. Ideal for applications requiring high-resolution imaging in industrial settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 2,309 parts In-Stock

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Vyrian

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Problanco Electronics

Mexico . 7,990 parts In-Stock

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Kulean Microsystems

USA . 2,684 parts In-Stock

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Northwest PG Solutions

USA . 1,659 parts In-Stock

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UHIMA Technologies

Türkiye . 945 parts In-Stock

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TANS Electronics

Latvia . 851 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 326 parts In-Stock

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Corohmni

South Africa . 294 parts In-Stock

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Native Components

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Overview

Experience the unparalleled quality and innovation of the CYIL2SM1300AA-GWCES image sensor by Onsemi. With a reputation for excellence in the industry, Onsemi continues to deliver cutting-edge technology that exceeds expectations. Ideal for applications requiring high-definition image capturing, this sensor offers unmatched performance and reliability. Explore the endless possibilities with this advanced sensor and elevate your projects to new heights. Choose Onsemi for superior quality and unmatched value.

Feature Benefit Bullets

Pixel Size (um): 14X14

The small pixel size allows for high resolution images with fine details.

Maximum Supply Voltage: 2.625 V

The low maximum supply voltage helps in reducing power consumption and heat generation.

Master Clock: 315 MHz

High master clock frequency enables fast image capture and processing.

Body Width: 30.5 inch

Compact body width makes the sensor suitable for integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology provides high-quality images with low noise levels.

Body Height: 3.75 mm

Low body height allows for thin and slim device designs.

Package Shape or Style: RECTANGULAR

Rectangular package shape is easy to integrate and mount on PCBs.

Minimum Supply Voltage: 2.375 V

The low minimum supply voltage ensures reliable operation even in low power scenarios.

Maximum Operating Temperature: 70 °C

High maximum operating temperature range allows for use in various environmental conditions.

Horizontal Pixel: 1280

High horizontal pixel count results in detailed and sharp images.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies interfacing with other digital systems and devices.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature enables usage in cold environments without performance degradation.

Housing: CERAMIC

Ceramic housing provides durability and protection to the sensor components.

Dynamic Range: 90 dB

High dynamic range allows for capturing a wide range of light intensities accurately.

Vertical Pixel: 1024

High vertical pixel count enhances image clarity and resolution.

Body Length/Diameter: 35.5 mm

Optimal body length/diameter ratio for easy integration and space-saving designs.

Termination Type: SOLDER

Solder termination provides secure and reliable electrical connections.

Output Interface Type: 3-WIRE INTERFACE

3-wire interface simplifies connectivity and communication with other devices.

Frame Rate: 500 fps

High frame rate enables capturing fast-moving objects or events with smooth video output.

Array Type: FULL FRAME

Full-frame array type ensures efficient light capture and utilization for high-quality images.

Sensitivity (V/lx.s): 10.16 V/lx.s

High sensitivity allows for excellent performance in low-light conditions.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature offers secure and stable installations on PCBs or surfaces.

Technical Specifications

Image Sensors CYIL2SM1300AA-GWCES attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SNAPSHOT SHUTTER

Array Type:

FULL FRAME

Body Width:

30.5 inch

Body Height:

3.75 mm

Body Length/Diameter:

35.5 mm

Dynamic Range:

90 dB

Frame Rate:

500 fps

Horizontal Pixel:

1280

Housing:

CERAMIC

Master Clock:

315 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1

Output Interface Type:

3-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

14X14

Sensitivity (V/lx.s):

10.16 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

2.625 V

Minimum Supply Voltage:

2.375 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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