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CYIL1SM0300AA-WWC

Onsemi

CYIL1SM0300AA-WWC by Onsemi

CYIL1SM0300AA-WWC by Onsemi is a CMOS image sensor with 640x480 pixels, 9.9um pixel size, and 80MHz master clock. It operates b/w -40 to 70 °C and has a dynamic range of 61dB. Ideal for applications requiring high-speed digital imaging in a compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,640 parts In-Stock

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1,640

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Digiode

USA . 695 parts In-Stock

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695

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Distributors (Availability)

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Native Components

USA . 534 parts In-Stock

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$4.935

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534

$4.935

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TANS Electronics

Latvia . 7,497 parts In-Stock

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7,497

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SupplyDigital Components

Austria . 6,401 parts In-Stock

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6,401

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Problanco Electronics

Mexico . 4,303 parts In-Stock

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4,303

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Kulean Microsystems

USA . 3,359 parts In-Stock

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3,359

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Corphita

USA . 2,284 parts In-Stock

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2,284

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Northwest PG Solutions

USA . 2,181 parts In-Stock

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$4.836

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2,181

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$4.836

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UHIMA Technologies

Türkiye . 609 parts In-Stock

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609

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Corohmni

South Africa . 264 parts In-Stock

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264

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Overview

Capture every moment with crystal clarity using the CYIL1SM0300AA-WWC Image Sensor by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability. Designed for a variety of applications, this image sensor offers unparalleled value with its high resolution and fast frame rate. Whether you're capturing stunning images or recording high-definition videos, this sensor will exceed your expectations. Upgrade your imaging experience with the CYIL1SM0300AA-WWC and see the difference for yourself.

Feature Benefit Bullets

Pixel Size (um) 9.9X9.9

Smaller pixel size allows for higher resolution images and better low-light performance.

Maximum Supply Voltage 3.3 V

Allows for operation in a wide range of voltage environments.

Master Clock 80 MHz

High master clock frequency enables fast data readout and processing.

Body Width 14.22 inch

Compact size makes it suitable for various applications.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS sensor technology provides high image quality and low power consumption.

Body Height 1.55 mm

Low profile design for easy integration into devices.

Package Shape or Style SQUARE

Square package shape for easy mounting and alignment.

Minimum Supply Voltage 2.5 V

Allows for operation in low power consumption mode.

Maximum Operating Temperature 70 °C

Wide operating temperature range for use in various environments.

Horizontal Pixel 640

High horizontal pixel count for detailed image capture.

Output Type DIGITAL VOLTAGE

Digital output for easy integration with digital systems.

Minimum Operating Temperature -40 °C

Low minimum operating temperature for use in extreme conditions.

Housing CERAMIC

Durable ceramic housing for long-term reliability.

Dynamic Range 61 dB

High dynamic range for capturing details in both bright and dark areas of an image.

Vertical Pixel 480

High vertical pixel count for excellent image resolution.

Body Length/Diameter 14.22 mm

Compact size for easy integration and space-saving design.

Optical Format (inch) 1/2

Standard optical format for compatibility with various lenses.

Data Rate 80 Mbps

High data rate for fast and continuous image transmission.

Termination Type SOLDER

Solder termination for secure electrical connection.

Output Interface Type 3-WIRE INTERFACE

3-wire interface for easy communication with external devices.

Frame Rate 250 fps

High frame rate for smooth and clear video capture.

Array Type FULL FRAME

Full-frame array for capturing the entire image without cropping or distortion.

Sensitivity (V/lx.s) 17 V/lx.s

High sensitivity for capturing clear images in low light conditions.

Mounting Feature SURFACE MOUNT

Surface mount feature for easy and secure mounting on PCBs.

Technical Specifications

Image Sensors CYIL1SM0300AA-WWC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC SNAPSHOT SHUTTER

Array Type:

FULL FRAME

Body Width:

14.22 inch

Body Height:

1.55 mm

Body Length/Diameter:

14.22 mm

Data Rate:

80 Mbps

Dynamic Range:

61 dB

Frame Rate:

250 fps

Horizontal Pixel:

640

Housing:

CERAMIC

Master Clock:

80 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2

Output Interface Type:

3-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

9.9X9.9

Sensitivity (V/lx.s):

17 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

3.3 V

Minimum Supply Voltage:

2.5 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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