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KLI-4104-AAA-CB-AA

Onsemi

KLI-4104-AAA-CB-AA by Onsemi

The Onsemi KLI-4104-AAA-CB-AA is an Image Sensor with 10x10 um pixel size, 4134 horizontal and vertical pixels. It operates b/w 0-70 °C, with a dynamic range of 60 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,341 parts In-Stock

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Digiode

USA . 1,311 parts In-Stock

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Problanco Electronics

Mexico . 8,348 parts In-Stock

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Kulean Microsystems

USA . 6,693 parts In-Stock

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TANS Electronics

Latvia . 6,271 parts In-Stock

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Corphita

USA . 946 parts In-Stock

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Corohmni

South Africa . 339 parts In-Stock

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SupplyDigital Components

Austria . 83 parts In-Stock

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UHIMA Technologies

Türkiye . 60 parts In-Stock

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Overview

Capture every detail with the KLI-4104-AAA-CB-AA image sensor by Onsemi. Boasting superior quality and precision engineering, this sensor delivers crystal-clear images with a dynamic range of 60 dB. Ideal for a wide range of applications, from industrial automation to medical imaging, this sensor offers unmatched value and performance. Experience the benefits of high-resolution imaging and reliable functionality with Onsemi's top-of-the-line image sensor.

Feature Benefit Bullets

Pixel Size (um): 10X10

The small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage allows for flexibility in power input and operation.

Body Width: 10.16 inch

The compact body width makes it easy to integrate this sensor into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image capture and low noise performance.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for easy placement and alignment during integration.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage ensures that the sensor can operate efficiently even with lower power input.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this sensor can withstand heat and operate in a variety of environments.

Output Range: 1.50-1.70V

The output range provides a good dynamic range for capturing images with varying light levels.

Output Type: ANALOG VOLTAGE

An analog voltage output allows for easy integration with other analog systems and components.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures that the sensor can function even in cold environments.

Housing: CERAMIC

A ceramic housing provides durability and protection for the sensor, making it suitable for long-term use.

Dynamic Range: 60 dB

The wide dynamic range allows the sensor to capture images with both bright and dark areas accurately.

Data Rate: 30 Mbps

The high data rate ensures fast and efficient transmission of image data for real-time processing.

Termination Type: SOLDER

Solder termination provides a reliable and secure connection for the sensor during installation.

Array Type: LINEAR

A linear array type allows for the sensor to capture images in a sequential manner for efficient image processing.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount feature makes it easy to secure the sensor in place during installation.

Technical Specifications

Image Sensors KLI-4104-AAA-CB-AA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 14 UV/ELECTRON

Array Type:

LINEAR

Body Width:

10.16 inch

Body Height:

3.81 mm

Body Length/Diameter:

60.96 mm

Data Rate:

30 Mbps

Dynamic Range:

60 dB

Horizontal Pixel:

4134

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

10X10

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

4134

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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