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KLI-4104-RAA-CP-AE

Onsemi

KLI-4104-RAA-CP-AE by Onsemi

KLI-4104-RAA-CP-AE by Onsemi is an Image Sensor with 10x10 um pixel size, 60 dB dynamic range, and 30 Mbps data rate. It is used in applications requiring voltage output, such as industrial imaging systems.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,428 parts In-Stock

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Vyrian

USA . 760 parts In-Stock

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Problanco Electronics

Mexico . 8,229 parts In-Stock

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SupplyDigital Components

Austria . 5,461 parts In-Stock

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TANS Electronics

Latvia . 1,138 parts In-Stock

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Kulean Microsystems

USA . 1,007 parts In-Stock

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Corphita

USA . 879 parts In-Stock

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UHIMA Technologies

Türkiye . 673 parts In-Stock

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Corohmni

South Africa . 415 parts In-Stock

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Overview

Enhance your imaging experience with the KLI-4104-RAA-CP-AE by Onsemi. As a leading manufacturer in image sensors, Onsemi delivers unparalleled quality and reliability. Perfect for a wide range of applications, this CCD image sensor offers a dynamic range of 60 dB and a data rate of 30 Mbps. With a compact rectangular design and through hole mounting feature, this sensor provides exceptional performance at a maximum supply voltage of 15.5 V. Elevate your imaging solutions with the KLI-4104-RAA-CP-AE and unlock endless possibilities in capturing high-quality images.

Feature Benefit Bullets

Pixel Size (um): 10X10

The small pixel size allows for high resolution images to be captured, making this image sensor ideal for applications where detail is important.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage ensures stable and reliable operation of the image sensor under varying power conditions.

Body Width: 10.16 inch

The compact body width makes this image sensor suitable for applications where space is limited and a smaller form factor is required.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality imaging capabilities, making this product a good choice for applications that require superior image quality.

Body Height: 5.89 mm

The low body height allows for easy integration into devices without adding significant bulk, making this image sensor suitable for compact designs.

Package Shape or Style: RECTANGULAR

The rectangular package shape makes it easy to mount and secure the image sensor in various applications, ensuring a stable and reliable connection.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage ensures that the image sensor can operate efficiently even with limited power, making it a versatile choice for different power supply scenarios.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature allows the image sensor to be used in a wide range of environmental conditions, making it suitable for both indoor and outdoor applications.

Output Type: VOLTAGE OUTPUT

The voltage output simplifies the interface with other electronic components, making it easier to integrate this image sensor into various systems.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures that the image sensor can function reliably even in cold environments, making it suitable for use in a variety of temperature conditions.

Housing: CERAMIC

The ceramic housing provides durability and protection for the image sensor, making it suitable for rugged environments or applications where reliability is crucial.

Dynamic Range: 60 dB

The high dynamic range allows the image sensor to capture a wide range of light intensities, ensuring that both bright and dark areas in the image are accurately represented.

Body Length/Diameter: 60.96 mm

The moderate body length/diameter provides a good balance between compactness and versatility, making this image sensor suitable for a variety of applications.

Data Rate: 30 Mbps

The high data rate enables fast and efficient data transfer, ensuring that images are captured and processed quickly, making this product suitable for real-time imaging applications.

Termination Type: SOLDER

The solder termination type provides a reliable and secure connection for the image sensor, ensuring that it stays firmly in place during operation.

Array Type: LINEAR

The linear array type allows for precise and accurate image capture, making this image sensor a good choice for applications that require high-resolution linear imaging.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature makes it easy to securely attach the image sensor to a PCB or other mounting surface, ensuring a stable and reliable connection.

Technical Specifications

Image Sensors KLI-4104-RAA-CP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 11.5 MICRO VOLT PER ELECTRON LUMA, 14 MICRO VOLT PER ELECTRON CHROMA; IT ALSO HAVE PIXEL SIZE LUMA 5 X 5 UM

Array Type:

LINEAR

Body Width:

10.16 inch

Body Height:

5.89 mm

Body Length/Diameter:

60.96 mm

Data Rate:

30 Mbps

Dynamic Range:

60 dB

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

10X10

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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