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11KAI-04070-QBA-JD-BA

Onsemi

11KAI-04070-QBA-JD-BA by Onsemi

The Onsemi 11KAI-04070-QBA-JD-BA is an image sensor with 2048x2048 pixels, 7.4um pixel size, and 70.5dB dynamic range. Ideal for applications requiring high-resolution imaging in industrial cameras or machine vision systems due to its rectangular package style and through-hole mounting feature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 385 parts In-Stock

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385

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Vyrian

USA . 259 parts In-Stock

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259

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Distributors (Availability)

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Native Components

USA . 293 parts In-Stock

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$8.090

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293

$8.090

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Northwest PG Solutions

USA . 1,258 parts In-Stock

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$8.899

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$8.009

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TANS Electronics

Latvia . 7,852 parts In-Stock

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Problanco Electronics

Mexico . 6,611 parts In-Stock

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Kulean Microsystems

USA . 3,622 parts In-Stock

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SupplyDigital Components

Austria . 2,523 parts In-Stock

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2,523

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Corphita

USA . 2,370 parts In-Stock

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UHIMA Technologies

Türkiye . 130 parts In-Stock

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Corohmni

South Africa . 97 parts In-Stock

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Overview

Upgrade your imaging capabilities with the Onsemi 11KAI-04070-QBA-JD-BA Image Sensor. Manufactured by Onsemi, a trusted name in the industry, this sensor offers high-quality performance and reliability. Ideal for applications such as surveillance cameras, automotive cameras, and industrial imaging, this sensor provides clear and detailed images with a wide dynamic range. Experience the value and benefits of superior image quality with the Onsemi 11KAI-04070-QBA-JD-BA Image Sensor.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Small pixel size allows for high resolution images with sharp detail and clarity.

Maximum Supply Voltage: 15.5 V

Allows for efficient power usage and flexibility in voltage input.

Body Width: 29 inch

Compact size makes it easy to integrate into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors provide high-quality image capture with low noise levels.

Body Height: 3 mm

Low profile design for sleek and unobtrusive installation.

Package Shape or Style: RECTANGULAR

Standard shape for easy handling and integration into existing designs.

Minimum Supply Voltage: 14.5 V

Allows for a wide range of voltage inputs for versatility in powering options.

Maximum Operating Temperature: 70 °C

High temperature tolerance for reliable performance in various environments.

Horizontal Pixel: 2048

High pixel count for detailed and high-resolution image capture.

Minimum Operating Temperature: -50 °C

Low temperature tolerance for use in extreme cold conditions.

Maximum Operating Current: 11 mA

Low power consumption for energy-efficient operation.

Dynamic Range: 70.5 dB

Wide dynamic range for capturing both dark and bright areas in images.

Vertical Pixel: 2048

Equal vertical and horizontal pixel count for balanced image resolution.

Body Length/Diameter: 40 mm

Optimal size for fitting into various devices without taking up too much space.

Optical Format (inch): 4/3

Standard optical format for compatibility with a wide range of lenses.

Termination Type: SOLDER

Secure and reliable solder connections for long-lasting performance.

Frame Rate: 28 fps

Fast frame rate for capturing smooth and real-time video footage.

Array Type: INTERLINE

Interline array design for efficient light capture and reduced image noise.

Mounting Feature: THROUGH HOLE MOUNT

Easy and secure mounting option for stable installation.

Technical Specifications

Image Sensors 11KAI-04070-QBA-JD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 8.7 MICRO VOLT PER ELECTRON LOW, 33 MICRO VOLT PER ELECTRON HIGH

Array Type:

INTERLINE

Body Width:

29 inch

Body Height:

3 mm

Body Length/Diameter:

40 mm

Dynamic Range:

70.5 dB

Frame Rate:

28 fps

Horizontal Pixel:

2048

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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