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KAI-04050-AAA-JP-AE

Onsemi

KAI-04050-AAA-JP-AE by Onsemi

KAI-04050-AAA-JP-AE by Onsemi is a 5.5x5.5um CCD image sensor with 2336H x 1752V pixels, offering a dynamic range of 64dB. It features an interline array type and through-hole mounting, suitable for applications in high-resolution imaging systems requiring precise color reproduction and low-light performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,543 parts In-Stock

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Digiode

USA . 831 parts In-Stock

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831

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SupplyDigital Components

Austria . 7,010 parts In-Stock

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Problanco Electronics

Mexico . 6,575 parts In-Stock

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Kulean Microsystems

USA . 5,965 parts In-Stock

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TANS Electronics

Latvia . 3,264 parts In-Stock

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Corphita

USA . 662 parts In-Stock

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Corohmni

South Africa . 412 parts In-Stock

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UHIMA Technologies

Türkiye . 47 parts In-Stock

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Overview

Experience unparalleled image quality and clarity with the KAI-04050-AAA-JP-AE by Onsemi. As a leading manufacturer in the industry, Onsemi sets the standard for excellence in image sensors. The versatility of this CCD sensor opens up a world of possibilities across various applications, from security cameras to medical imaging. Trust in Onsemi to deliver reliable performance and exceptional value with the KAI-04050-AAA-JP-AE. Elevate your imaging experience today.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for higher resolution images with detailed clarity, making this sensor a great choice for applications requiring high-quality images.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors are known for their high image quality and low noise levels, making them ideal for applications where image accuracy is crucial.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for easier integration into various devices and systems, making this sensor versatile and adaptable for different applications.

Dynamic Range: 64 dB

A high dynamic range of 64 dB means that this sensor can capture a wide range of light intensities, resulting in balanced and detailed images even in challenging lighting conditions.

Termination Type: SOLDER

Solder termination ensures a secure and reliable connection, making this sensor durable and long-lasting in use.

Array Type: INTERLINE

Interline array type allows for faster readout speeds, minimizing image distortion and enabling the sensor to capture fast-moving subjects with high accuracy.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting provides a strong and stable attachment to the device, ensuring the sensor remains securely in place during operation, making it a reliable choice in various environments.

Technical Specifications

Image Sensors KAI-04050-AAA-JP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Dynamic Range:

64 dB

Horizontal Pixel:

2336

Mounting Feature:

Optical Format (inch):

1

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Termination Type:

SOLDER

Vertical Pixel:

1752

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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