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NOIP1SE0300A-QDI

Onsemi

NOIP1SE0300A-QDI by Onsemi

NOIP1SE0300A-QDI by Onsemi is an image sensor with 4.80X4.80 um pixel size, 72 MHz master clock, and 640x480 resolution. It operates at a voltage range of 1.7-1.9V and is ideal for digital imaging applications requiring high frame rates up to 815 fps in a compact square package.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

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1k+

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Vyrian

USA . 3,892 parts In-Stock

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Digiode

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$2.794

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AZTECH Wire

Italy . 593 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

Austria . 5,468 parts In-Stock

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Kulean Microsystems

USA . 3,718 parts In-Stock

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TANS Electronics

Latvia . 3,629 parts In-Stock

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Corphita

USA . 1,412 parts In-Stock

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Perfect Parts

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Corohmni

South Africa . 174 parts In-Stock

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Kepictronics

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UHIMA Technologies

Türkiye . 94 parts In-Stock

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Overview

Capture stunning images with the NOIP1SE0300A-QDI by Onsemi. As a leading manufacturer in the industry, Onsemi's image sensors are known for their superior quality and performance. Ideal for a wide range of applications, this sensor offers exceptional value and benefits to customers, providing crisp and clear digital images with a dynamic range of 60 dB. Experience the advantages of Onsemi's innovative technology and elevate your imaging capabilities today.

Feature Benefit Bullets

Pixel Size (um): 4.80X4.80

Smaller pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage: 1.9 V

Lower maximum supply voltage helps in reducing power consumption and heat generation.

Master Clock: 72 MHz

High master clock speed enables fast data processing and high frame rates.

Body Width: 14.22 inch

Compact body width makes it suitable for applications with space constraints.

Power Supplies (V): 3.3

Standard power supply voltage compatible with many electronic systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer low power consumption and high signal-to-noise ratio.

Body Height: 2.28 mm

Low profile body height allows for easy integration into compact designs.

Package Shape or Style: SQUARE

Square package shape simplifies mounting and alignment in assembly processes.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage ensures operational stability at low power levels.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for use in various environments.

Horizontal Pixel: 640

High horizontal pixel count contributes to detailed and high-resolution images.

Output Type: DIGITAL VOLTAGE

Digital output simplifies interfacing with other digital systems for data processing.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures functionality in extreme cold conditions.

Maximum Operating Current: 80 mA

Low operating current consumption helps in energy-efficient operation.

Dynamic Range: 60 dB

High dynamic range allows capturing a wide range of light intensities accurately.

Vertical Pixel: 480

Vertical pixel count complements horizontal pixels for clear and sharp images.

Body Length/Diameter: 14.22 mm

Compact body length complements the overall small size of the sensor.

Spectral Response (nm): 400-1000

Wide spectral response range enables capturing images across different wavelengths.

Optical Format (inch): 1/4

Standard optical format compatible with various lenses and optical systems.

Termination Type: SOLDER

Solder termination provides a reliable electrical connection for long-term use.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface simplifies connection and communication with external devices.

Frame Rate: 815 fps

High frame rate enables capturing fast-moving objects with clarity and detail.

Array Type: FRAME

Frame array type allows for sequential image capture for video or motion analysis.

Mounting Feature: SURFACE MOUNT

Surface mount capability facilitates easy and secure installation on circuit boards.

Technical Specifications

Image Sensors NOIP1SE0300A-QDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 3.2 TO 3.4 V SUPPLY VOLTAGE, GLOBAL SHUTTER

Array Type:

FRAME

Body Width:

14.22 inch

Body Height:

2.28 mm

Body Length/Diameter:

14.22 mm

Dynamic Range:

60 dB

Frame Rate:

815 fps

Horizontal Pixel:

640

Master Clock:

72 MHz

Mounting Feature:

Maximum Operating Current:

80 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Power Supplies (V):

3.3

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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