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AR023ZMCSC00SUEA0-DRBR

Onsemi

AR023ZMCSC00SUEA0-DRBR by Onsemi

The Onsemi AR023ZMCSC00SUEA0-DRBR image sensor features 3x3 um pixel size, 48 MHz master clock, and 1928 horizontal pixels. Ideal for applications requiring a high dynamic range of 105 dB, such as surveillance cameras, automotive vision systems, and industrial imaging solutions.

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Lifecycle Status

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Vyrian

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Bristol Electronics

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Digiode

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Nova Conductors

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Ampacity Inc.

Singapore . 2,044 parts In-Stock

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Corohmni

South Africa . 183 parts In-Stock

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TANS Electronics

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Kulean Microsystems

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Problanco Electronics

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Argo Parts USA

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Perfect Parts

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Continental Prestige Electronics

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Netroflash

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UHIMA Technologies

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Corphita

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Overview

Capture every moment in stunning clarity with the AR023ZMCSC00SUEA0-DRBR image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in all their products. This image sensor, part of the Image Sensors category, offers unparalleled value to customers with its high pixel resolution, wide operating temperature range, and impressive dynamic range. Perfect for applications requiring superior image capture such as security cameras, automotive cameras, and industrial imaging systems, this sensor is a game-changer in the world of digital imaging. Experience the difference with the AR023ZMCSC00SUEA0-DRBR and elevate your imaging projects to new heights.

Feature Benefit Bullets

Pixel Size (um): 3X3

The small pixel size allows for higher resolution images to be captured and provides more detail in each pixel, resulting in clearer and sharper images.

Maximum Supply Voltage: 1.95 V

The high maximum supply voltage ensures stable and reliable operation of the image sensor even under varying voltage conditions.

Master Clock: 48 MHz

The high master clock frequency enables fast and efficient data processing, leading to quicker image capture and transmission.

Body Width: 10 inch

The compact body width of the sensor makes it suitable for integration into smaller devices or systems, saving space and allowing for versatile mounting options.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

The CMOS sensor type offers low power consumption, high sensitivity, and excellent image quality, making it a reliable choice for a wide range of imaging applications.

Minimum Operating Temperature: -30 °C

The wide operating temperature range allows the sensor to function effectively in extreme temperature conditions, ensuring reliable performance in various environments.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies connectivity and communication with external devices, making it easier to integrate the sensor into different systems or platforms.

Technical Specifications

Image Sensors AR023ZMCSC00SUEA0-DRBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.5 TO 3.1 V

Array Type:

LINEAR

Body Width:

10 inch

Body Height:

1.4 mm

Body Length/Diameter:

10 mm

Dynamic Range:

105 dB

Frame Rate:

60 fps

Horizontal Pixel:

1928

JESD-609 Code:

e1

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

265 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.7

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

1088

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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