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NOIP1SN2000A-LTI

Onsemi

NOIP1SN2000A-LTI by Onsemi

NOIP1SN2000A-LTI by Onsemi features 4.8x4.8 um pixel size, 360 MHz master clock, and 1920x1200 resolution. Ideal for image sensing applications with a spectral response of 400-1000 nm and frame rate of 230 fps.

Median Price

$182.650

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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DigiKey

USA . 42 parts In-Stock

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$179.870

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Verical

USA . 42 parts In-Stock

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$185.429

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Digiode

USA . 714 parts In-Stock

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$154.138

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Vyrian

USA . 8,552 parts In-Stock

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Chip Stock

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Bristol Electronics

USA . 3,000 parts In-Stock

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IBS Electronics

USA . 126 parts In-Stock

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Flip Electronics

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LIBRA Elektronik GmbH

Germany . 24 parts In-Stock

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Corphita

USA . 1,281 parts In-Stock

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$146.025

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Corohmni

South Africa . 289 parts In-Stock

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SupplyDigital Components

Austria . 8,055 parts In-Stock

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Kulean Microsystems

USA . 6,762 parts In-Stock

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Problanco Electronics

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GlobX GmbH

Germany . 3,800 parts In-Stock

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TANS Electronics

Latvia . 2,969 parts In-Stock

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Perfect Parts

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UHIMA Technologies

Türkiye . 71 parts In-Stock

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Overview

Experience stunning image quality and superior performance with the NOIP1SN2000A-LTI by Onsemi. As a leading manufacturer in the industry, Onsemi's image sensors are renowned for their reliability and innovation. This image sensor is perfect for a wide range of applications, delivering crisp and detailed images every time. With its high dynamic range and fast frame rate, the NOIP1SN2000A-LTI ensures that you capture every moment with precision. Elevate your imaging experience with this top-of-the-line product that offers unparalleled value and benefits to meet all your imaging needs.

Feature Benefit Bullets

Pixel Size (um): 4.8X4.8

Smaller pixel size allows for higher resolution images and better quality.

Maximum Supply Voltage: 1.9 V

Higher maximum supply voltage provides flexibility in power supply options.

Master Clock: 360 MHz

High master clock frequency enables fast data readout and processing.

Body Width: 19 inch

Compact size makes it suitable for integration into various devices or systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology offers low power consumption and high sensitivity.

Package Shape or Style: SQUARE

Square package shape allows for easy mounting and integration into systems.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage helps in reducing power consumption.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliability in various environments.

Horizontal Pixel: 1920

High horizontal pixel count provides detailed images with good clarity.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for usage in extreme conditions.

Dynamic Range: 60 dB

Wide dynamic range enables capturing details in both bright and dark areas of an image.

Vertical Pixel: 1200

High vertical pixel count contributes to the overall image quality.

Body Length/Diameter: 19 mm

Compact size and shape make it easy to integrate and mount on different surfaces.

Spectral Response (nm): 400-1000

Wide spectral response range allows for capturing images in different lighting conditions.

Optical Format (inch): 2/3

Compatible optical format for various lenses and imaging systems.

Termination Type: SOLDER

Solder termination provides reliable electrical connections.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface for easy connectivity with other devices or systems.

Frame Rate: 230 fps

High frame rate allows for capturing fast-moving objects or scenes with clarity.

Array Type: FRAME

Frame array type enables capturing images in a sequential and organized manner.

Sensitivity (V/lx.s): 7.5 V/lx.s

High sensitivity to light ensures clear and detailed images in various lighting conditions.

Mounting Feature: SURFACE MOUNT

Surface mount allows for easy and secure mounting on PCBs or other surfaces.

Technical Specifications

Image Sensors NOIP1SN2000A-LTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

19 inch

Body Height:

1.78 mm

Body Length/Diameter:

19 mm

Dynamic Range:

60 dB

Frame Rate:

230 fps

Horizontal Pixel:

1920

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

2/3

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.8X4.8

Sensitivity (V/lx.s):

7.5 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1200

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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