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KAI-1020-FBA-FD-AE

Onsemi

KAI-1020-FBA-FD-AE by Onsemi

KAI-1020-FBA-FD-AE by Onsemi is an image sensor with 7.4x7.4 um pixel size, 1000x1000 resolution, and 58 dB dynamic range. It is used in applications requiring high-quality imaging such as surveillance cameras and industrial machine vision systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,970 parts In-Stock

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Vyrian

USA . 820 parts In-Stock

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820

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Kulean Microsystems

USA . 6,802 parts In-Stock

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Problanco Electronics

Mexico . 5,231 parts In-Stock

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SupplyDigital Components

Austria . 4,656 parts In-Stock

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TANS Electronics

Latvia . 2,349 parts In-Stock

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Corohmni

South Africa . 434 parts In-Stock

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Corphita

USA . 233 parts In-Stock

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UHIMA Technologies

Türkiye . 7 parts In-Stock

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Overview

Elevate your imaging experience with the KAI-1020-FBA-FD-AE by Onsemi, a cutting-edge image sensor that promises unparalleled quality and performance. Manufactured by Onsemi, a leader in semiconductor technology, this sensor is ideal for a wide range of applications. With its advanced features and superior capabilities, this image sensor offers customers exceptional value, benefits, and advantages. Experience crystal-clear images like never before with the KAI-1020-FBA-FD-AE.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

The small pixel size allows for high resolution images to be captured, making this image sensor ideal for applications requiring detailed imaging.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage ensures compatibility with a wide range of power sources, providing flexibility in design and implementation.

Body Width: 18.29 inch

The compact body width allows for easy integration into various devices without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD image sensors are known for their high-quality image capture capabilities, making this product suitable for demanding imaging applications.

Body Height: 2.92 mm

The low body height contributes to the overall compactness of the sensor, enabling it to be used in space-constrained environments.

Package Shape or Style: SQUARE

The square package shape allows for easy mounting and alignment, simplifying the integration process.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage helps in reducing power consumption, making the sensor energy-efficient.

Horizontal Pixel: 1000

A high number of horizontal pixels results in detailed and high-resolution images, suitable for applications where image quality is crucial.

Housing: CERAMIC

Ceramic housing provides durability and thermal stability, ensuring the sensor's longevity and reliable performance in various operating conditions.

Dynamic Range: 58 dB

A high dynamic range allows the sensor to capture a wide range of light intensities accurately, making it suitable for scenes with varying lighting conditions.

Vertical Pixel: 1000

A high number of vertical pixels enhances the sensor's ability to capture detailed images with excellent clarity and sharpness.

Body Length/Diameter: 18.29 mm

The compact body length/diameter further contributes to the sensor's overall small form factor, making it suitable for compact devices.

Data Rate: 40 Mbps

A high data rate allows for fast and efficient data transfer, enabling real-time image processing and reducing latency in image capture.

Termination Type: SOLDER

Solder termination provides a reliable and secure electrical connection, ensuring stable performance and longevity of the sensor in various applications.

Array Type: INTERLINE

Interline array type offers fast readout speed and reduced blooming effects, making the sensor suitable for high-speed imaging applications.

Mounting Feature: SURFACE MOUNT

Surface mounting feature simplifies the integration process and reduces assembly time, making it easy to incorporate the sensor into electronic devices.

Technical Specifications

Image Sensors KAI-1020-FBA-FD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY 12 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

18.29 inch

Body Height:

2.92 mm

Body Length/Diameter:

18.29 mm

Data Rate:

40 Mbps

Dynamic Range:

58 dB

Horizontal Pixel:

1000

Housing:

CERAMIC

Mounting Feature:

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1000

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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