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KAE-08151-FBA-SD-EE

Onsemi

KAE-08151-FBA-SD-EE by Onsemi

KAE-08151-FBA-SD-EE by Onsemi is an image sensor with 5.5x5.5 um pixel size, 66 dB dynamic range, and 2856 horizontal and vertical pixels. It operates b/w -40 to 40 °C with a supply voltage range of 14.7V to 15.3V. Ideal for applications requiring high-resolution imaging in industrial or scientific settings due to its superior technical specifications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,243 parts In-Stock

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Digiode

USA . 359 parts In-Stock

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359

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Problanco Electronics

Mexico . 8,267 parts In-Stock

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SupplyDigital Components

Austria . 7,857 parts In-Stock

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Kulean Microsystems

USA . 4,039 parts In-Stock

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TANS Electronics

Latvia . 2,950 parts In-Stock

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Corphita

USA . 650 parts In-Stock

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Corohmni

South Africa . 419 parts In-Stock

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UHIMA Technologies

Türkiye . 366 parts In-Stock

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Overview

Unleash the power of crystal-clear imaging with the KAE-08151-FBA-SD-EE by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their image sensors. Perfect for a wide range of applications, this sensor offers unparalleled value and benefits to customers seeking high-definition images with exceptional clarity. Don't settle for anything less than the best - choose the KAE-08151-FBA-SD-EE for all your imaging needs.

Feature Benefit Bullets

Pixel Size (um) 5.5X5.5

The small pixel size allows for high resolution images to be captured with clarity and detail.

Maximum Supply Voltage 15.3 V

The high maximum supply voltage ensures stable power delivery for optimal performance of the image sensor.

Body Width 41 inch

The compact body width makes it easy to integrate the image sensor into various devices without taking up too much space.

Sensors or Transducers Type IMAGE SENSOR,CCD

Being a CCD image sensor ensures high-quality images with accurate color reproduction and low noise levels.

Body Height 5.62 mm

The low body height allows for the image sensor to be placed in thin devices or applications where space is limited.

Package Shape or Style RECTANGULAR

The rectangular package shape makes it easier to mount and align the image sensor during installation.

Minimum Supply Voltage 14.7 V

The low minimum supply voltage helps in efficient power consumption and prolongs the battery life of the device.

Maximum Operating Temperature 40 °C

The high maximum operating temperature ensures the image sensor can withstand harsh environmental conditions without affecting performance.

Horizontal Pixel 2856

With a high number of horizontal pixels, this image sensor can capture wide-angle shots with high resolution and detail.

Minimum Operating Temperature -40 °C

The low minimum operating temperature allows the image sensor to be used in cold environments without any issues.

Maximum Operating Current 9 mA

With low operating current, the image sensor consumes less power, making it energy-efficient for prolonged use.

Dynamic Range 66 dB

The high dynamic range ensures that both dark and bright areas in the image are displayed accurately with good contrast.

Vertical Pixel 2856

The high number of vertical pixels allows for capturing detailed images with clarity and sharpness.

Body Length/Diameter 43.5 mm

The moderate body length/diameter provides a good balance between compactness and functionality for versatile applications.

Optical Format (inch) 4/3

The 4/3 optical format offers a standard aspect ratio for capturing images in a natural and realistic view.

Termination Type SOLDER

The solder termination type ensures a secure and reliable connection for stable performance of the image sensor.

Frame Rate 14 fps

With a frame rate of 14 fps, this image sensor can capture smooth and fluid videos with crisp details.

Array Type INTERLINE

The interline array type allows for faster readout speeds and reduced image lag, improving overall image quality.

Mounting Feature THROUGH HOLE MOUNT

The through-hole mounting feature makes it easy to securely attach the image sensor to a PCB for stable and reliable operation.

Technical Specifications

Image Sensors KAE-08151-FBA-SD-EE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY 44 MICRO VOLT PER ELECTRON; ELECTRONIC SHUTTER; GLOBAL SHUTTER

Array Type:

INTERLINE

Body Width:

41 inch

Body Height:

5.62 mm

Body Length/Diameter:

43.5 mm

Dynamic Range:

66 dB

Frame Rate:

14 fps

Horizontal Pixel:

2856

Mounting Feature:

Maximum Operating Current:

9 mA

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.3 V

Minimum Supply Voltage:

14.7 V

Termination Type:

SOLDER

Vertical Pixel:

2856

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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