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KAE-02150-FBB-SD-EE

Onsemi

KAE-02150-FBB-SD-EE by Onsemi

KAE-02150-FBB-SD-EE by Onsemi is a 2/3 inch CCD image sensor with 1920x1080 pixels, offering a dynamic range of 68 dB. It operates b/w -40 to 40 °C and supports frame rates up to 60 fps. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,531 parts In-Stock

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Digiode

USA . 1,286 parts In-Stock

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Problanco Electronics

Mexico . 7,530 parts In-Stock

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SupplyDigital Components

Austria . 7,416 parts In-Stock

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Kulean Microsystems

USA . 4,949 parts In-Stock

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TANS Electronics

Latvia . 4,107 parts In-Stock

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Corphita

USA . 2,361 parts In-Stock

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UHIMA Technologies

Türkiye . 134 parts In-Stock

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Corohmni

South Africa . 126 parts In-Stock

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Overview

Elevate your imaging experience with the KAE-02150-FBB-SD-EE by Onsemi. As a leading manufacturer of image sensors, Onsemi delivers top-notch quality and reliability. This cutting-edge image sensor opens up a world of possibilities in applications such as surveillance, medical imaging, and industrial automation. With a high pixel count, wide dynamic range, and fast frame rate, this sensor provides unparalleled performance and precision. Upgrade your technology today with the KAE-02150-FBB-SD-EE and capture every detail with crystal clarity.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

Smaller pixel size allows for higher resolution images to be captured.

Maximum Supply Voltage: 6 V

Allows for flexibility in power supply options.

Body Width: 29.97 inch

Compact size for easy integration into a variety of products.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image capture capabilities.

Body Height: 4.61 mm

Slim profile for versatile mounting options.

Package Shape or Style: RECTANGULAR

Sleek design for a modern appearance.

Minimum Supply Voltage: 4.5 V

Efficient power consumption at lower voltage levels.

Maximum Operating Temperature: 40 °C

Can operate in high-temperature environments without issues.

Horizontal Pixel: 1920

High horizontal pixel count for detailed images.

Minimum Operating Temperature: -40 °C

Wide operating temperature range for use in various conditions.

Housing: ALUMINIUM

Durable and lightweight housing material.

Dynamic Range: 68 dB

Good dynamic range for capturing both dark and bright areas in an image.

Vertical Pixel: 1080

High vertical pixel count for detailed images.

Body Length/Diameter: 33 mm

Compact size for easy installation in tight spaces.

Optical Format (inch): 2/3

Standard optical format for compatibility with different lenses.

Termination Type: SOLDER

Secure termination for reliable connections.

Frame Rate: 60 fps

High frame rate for capturing fast-moving subjects.

Array Type: INTERLINE

Interline sensor for fast image readout.

Mounting Feature: THROUGH HOLE MOUNT

Easy and secure mounting option for installation.

Technical Specifications

Image Sensors KAE-02150-FBB-SD-EE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 44 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT ALSO HAVE DYNAMIC RANGE 60 AND 86 DB

Array Type:

INTERLINE

Body Width:

29.97 inch

Body Height:

4.61 mm

Body Length/Diameter:

33 mm

Dynamic Range:

68 dB

Frame Rate:

60 fps

Horizontal Pixel:

1920

Housing:

ALUMINIUM

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

2/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

6 V

Minimum Supply Voltage:

4.5 V

Termination Type:

SOLDER

Vertical Pixel:

1080

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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