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MT9M001C12STM

Onsemi

MT9M001C12STM by Onsemi

The Onsemi MT9M001C12STM image sensor features a pixel size of 5.2x5.2 um, operates at a max supply voltage of 3.6V, and has a master clock of 48 MHz. This CMOS sensor is commonly used in applications requiring high-quality digital imaging with an optical format of 1/2 inch and a frame rate of 30 fps.

Median Price

$15.310

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 15 parts In-Stock

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$10.630

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TEDSS.com

USA . 43 parts In-Stock

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$19.990

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Digiode

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Vyrian

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Martec Srl

Italy . 441 parts In-Stock

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Electronic Treasures

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Bristol Electronics

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Next Level Components, LLC

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First Choice Components Inc.

USA . 4 parts In-Stock

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Rebound Electronics

UK . 2 parts In-Stock

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Prism Electronics

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Aztec Data Supply Inc.

USA . 185 parts In-Stock

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$2.430

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$2.430

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Modulus Dynamics

Lithuania . 1,645 parts In-Stock

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$2.975

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$2.975

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$2.975

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Semicontronic

India . 921 parts In-Stock

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$7.750

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$7.556

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$7.518

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$7.750

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Corohmni

South Africa . 272 parts In-Stock

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$10.209

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AZTECH Wire

Italy . 213 parts In-Stock

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$10.410

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Continental Prestige Electronics

USA . 6,777 parts In-Stock

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$10.630

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$10.417

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Lixinc

USA . 19,067 parts In-Stock

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SupplyDigital Components

Austria . 7,179 parts In-Stock

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Kulean Microsystems

USA . 3,983 parts In-Stock

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Corphita

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Perfect Parts

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Kepictronics

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Problanco Electronics

Mexico . 868 parts In-Stock

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UHIMA Technologies

Türkiye . 690 parts In-Stock

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Argo Parts USA

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TANS Electronics

Latvia . 390 parts In-Stock

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Futuretech Components

Singapore . 300 parts In-Stock

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RC Electronics

USA . 135 parts In-Stock

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$326.980

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$298.450

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$289.500

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Cyclops Electronics Ltd (Excess)

UK . 60 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$10.417

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$10.099

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$9.886

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Overview

Capture the world with crystal-clear precision using the MT9M001C12STM image sensor by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-notch quality and reliability in every product. Ideal for a wide range of applications, this image sensor offers unmatched performance and versatility. Whether you're looking to enhance your surveillance system, improve your medical imaging devices, or elevate your automotive cameras, the MT9M001C12STM provides exceptional value, benefits, and advantages that will exceed your expectations. Elevate your projects with Onsemi's cutting-edge technology today!

Feature Benefit Bullets

Pixel Size (um) 5.2X5.2:

High resolution due to small pixel size.

Maximum Supply Voltage 3.6 V:

Compatible with a wide range of power sources.

Master Clock 48 MHz:

Ensures fast data processing and image capture.

Body Width 14.22 inch:

Provides a compact and space-saving design.

Sensors or Transducers Type IMAGE SENSOR,CMOS:

Offers high-quality image capture capabilities.

Body Height 2.48 mm:

Slim profile for easy integration into devices.

Package Shape or Style SQUARE:

Easy to mount and secure in place.

Minimum Supply Voltage 3 V:

Operates efficiently without excessive power consumption.

Maximum Operating Temperature 70 °C:

Can withstand high temperature environments.

Output Range 0.20-3.40V:

Provides a wide range of output voltage options.

Output Type DIGITAL VOLTAGE:

Easy compatibility with digital systems.

Minimum Operating Temperature 0 °C:

Functions reliably even in low temperature conditions.

Terminal Finish GOLD:

Ensures reliable and long-lasting connections.

Maximum Operating Current 110 mA:

Efficient operation without overheating.

Housing CERAMIC, METAL-SEALED COFIRED:

Durable and resistant to environmental factors.

Dynamic Range 68.2 dB:

Captures a wide range of light intensities accurately.

Body Length/Diameter 14.22 mm:

Uniform size for standardized device integration.

Optical Format (inch) 1/2:

Compatible with various optical systems.

Termination Type SOLDER:

Secure and reliable connections for long-term use.

Output Interface Type 2-WIRE INTERFACE:

Easy connectivity for data transfer.

Frame Rate 30 fps:

Smooth and high-quality image and video capture.

Array Type FRAME TRANSFER:

Efficient data transfer and processing.

Technical Specifications

Image Sensors MT9M001C12STM attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME TRANSFER

Body Width:

14.22 inch

Body Height:

2.48 mm

Body Length/Diameter:

14.22 mm

Dynamic Range:

68.2 dB

Frame Rate:

30 fps

Housing:

CERAMIC, METAL-SEALED COFIRED

JESD-609 Code:

e4

Master Clock:

48 MHz

Maximum Operating Current:

110 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1/2

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

5.2X5.2

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Terminal Finish:

GOLD

Termination Type:

SOLDER

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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