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MT9V127IA3XTC-TP

Onsemi

MT9V127IA3XTC-TP by Onsemi

MT9V127IA3XTC-TP by Onsemi is a 5.60x5.60 um CMOS image sensor with 27 MHz master clock, ideal for digital voltage output applications. Operating at -40 to 105 °C, it offers a dynamic range of 74.8 dB and supports a frame rate of 60 fps, making it suitable for surface mount installations in various imaging systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

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Digiode

USA . 689 parts In-Stock

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Kulean Microsystems

USA . 7,552 parts In-Stock

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SupplyDigital Components

Austria . 5,982 parts In-Stock

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TANS Electronics

Latvia . 4,267 parts In-Stock

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Problanco Electronics

Mexico . 2,723 parts In-Stock

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Corphita

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Corohmni

South Africa . 367 parts In-Stock

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UHIMA Technologies

Türkiye . 74 parts In-Stock

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Overview

Capture every moment with the MT9V127IA3XTC-TP image sensor by Onsemi. Designed with precision and quality in mind, this sensor offers unparalleled performance in a compact package. Ideal for a wide range of applications, from security cameras to automotive systems, this sensor delivers crisp and clear images with a dynamic range of 74.8 dB. With a maximum operating temperature of 105 °C and a frame rate of 60 fps, this sensor is sure to exceed your expectations. Trust Onsemi for cutting-edge technology that brings your vision to life.

Feature Benefit Bullets

Pixel Size (um): 5.60X5.60

The small pixel size allows for higher resolution and better image quality.

Maximum Supply Voltage: 1.9 V

Provides sufficient power to the image sensor for optimal performance.

Master Clock: 27 MHz

High master clock frequency ensures fast data processing and high frame rate.

Body Width: 9 inch

Compact size makes it suitable for integration into various electronic devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer low power consumption and high performance.

Package Shape or Style: SQUARE

Square package shape allows for easy and secure mounting onto circuit boards.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage helps in saving power and extends battery life.

Maximum Operating Temperature: 105 °C

Wide operating temperature range makes it suitable for use in various environments.

Output Type: DIGITAL VOLTAGE

Digital output simplifies data processing and interfacing with other components.

Minimum Operating Temperature: -40 °C

Can function in extreme cold conditions without any issues.

Maximum Operating Current: 50 mA

Low operating current consumption for efficient power usage.

Housing: PLASTIC

Durable plastic housing protects the sensor from external damage.

Dynamic Range: 74.8 dB

High dynamic range captures a wider range of light intensities for better image quality.

Body Length/Diameter: 9 mm

Compact body size for easy integration and space-saving design.

Optical Format (inch): 1/4

Common optical format for compatibility with various lenses and imaging systems.

Termination Type: SOLDER

Reliable solder termination ensures secure electrical connections.

Output Interface Type: 2-WIRE INTERFACE

Simple 2-wire interface for easy communication with other devices.

Frame Rate: 60 fps

High frame rate allows for smooth and detailed video capture.

Array Type: FRAME

Frame array type for capturing multiple images simultaneously.

Mounting Feature: SURFACE MOUNT

Surface mount design for easy and secure installation on PCBs.

Technical Specifications

Image Sensors MT9V127IA3XTC-TP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE ANALOG SUPPLY VOLTAGE 2.66-2.94 V, ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.35 mm

Body Length/Diameter:

9 mm

Dynamic Range:

74.8 dB

Frame Rate:

60 fps

Housing:

PLASTIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

5.60X5.60

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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