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11KAI-04070-PBA-JD-AE

Onsemi

11KAI-04070-PBA-JD-AE by Onsemi

The Onsemi 11KAI-04070-PBA-JD-AE is an image sensor with 2048x2048 pixels, 7.4um pixel size, and 70.5dB dynamic range. It operates b/w -50 to 70 °C and has a max supply voltage of 15.5V. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,298 parts In-Stock

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Digiode

USA . 1,858 parts In-Stock

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Native Components

USA . 891 parts In-Stock

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$0.407

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$0.391

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Northwest PG Solutions

USA . 1,597 parts In-Stock

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$0.448

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$0.395

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SupplyDigital Components

Austria . 5,648 parts In-Stock

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Problanco Electronics

Mexico . 2,548 parts In-Stock

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Corphita

USA . 2,096 parts In-Stock

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TANS Electronics

Latvia . 2,003 parts In-Stock

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Kulean Microsystems

USA . 582 parts In-Stock

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UHIMA Technologies

Türkiye . 361 parts In-Stock

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Corohmni

South Africa . 143 parts In-Stock

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Overview

Capture the finest details with the 11KAI-04070-PBA-JD-AE image sensor by Onsemi. Known for their cutting-edge technology and precision engineering, Onsemi delivers superior quality in every product. Ideal for a wide range of applications, this image sensor offers exceptional performance and reliability. Enhance your imaging systems with the unmatched value, benefits, and advantages that this product brings to your projects. Elevate your imaging experience with Onsemi.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Smaller pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage provides flexibility in power supply options and ensures stable performance.

Body Width: 29 inch

Compact body width allows for easy integration into various devices and applications.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality imaging capabilities and sensitivity to light.

Body Height: 3 mm

Low profile design enables the sensor to be easily incorporated into slim devices or systems.

Package Shape or Style: RECTANGULAR

Rectangular shape provides a standard form factor for ease of mounting and compatibility with other components.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage helps to reduce power consumption and extend battery life.

Maximum Operating Temperature: 70 °C

High maximum operating temperature ensures the sensor can withstand harsh environmental conditions.

Horizontal Pixel: 2048

High horizontal pixel count enables capturing detailed images with clarity and sharpness.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature allows the sensor to function in extreme cold environments without loss of performance.

Maximum Operating Current: 11 mA

Low operating current helps in reducing power consumption and heat generation.

Dynamic Range: 70.5 dB

Wide dynamic range allows the sensor to capture both bright and dark areas in an image with high contrast.

Vertical Pixel: 2048

High vertical pixel count contributes to the overall image resolution and quality.

Body Length/Diameter: 40 mm

Moderate body length/diameter allows for a balanced size that fits well in various applications.

Optical Format (inch): 4/3

Standard 4/3 optical format provides compatibility with a wide range of lenses and accessories.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections in the assembly process.

Frame Rate: 28 fps

Fast frame rate enables capturing moving objects or high-speed events with smooth motion.

Array Type: INTERLINE

Interline array type reduces blooming effects and enhances image quality, especially in high contrast scenes.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting simplifies the installation process and provides a secure attachment for the sensor.

Technical Specifications

Image Sensors 11KAI-04070-PBA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 8.7 MICRO VOLT PER ELECTRON LOW, 33 MICRO VOLT PER ELECTRON HIGH

Array Type:

INTERLINE

Body Width:

29 inch

Body Height:

3 mm

Body Length/Diameter:

40 mm

Dynamic Range:

70.5 dB

Frame Rate:

28 fps

Horizontal Pixel:

2048

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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