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MT9V022177ATM

Onsemi

MT9V022177ATM by Onsemi

MT9V022177ATM by Onsemi is a 1/3 inch CMOS image sensor with 752x480 pixels. It operates at 26.6 MHz, has a dynamic range of 54.4 dB, and supports a frame rate of 60 fps. Ideal for applications requiring high-resolution imaging in devices such as cameras and surveillance systems.

Median Price

$7.300

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 809 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 143 parts In-Stock

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Digiode

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SupplyDigital Components

Austria . 7,492 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

USA . 4,597 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 1,255 parts In-Stock

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

UK . 143 parts In-Stock

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Glotronic Ltd.

UK . 114 parts In-Stock

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Corohmni

South Africa . 79 parts In-Stock

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UHIMA Technologies

Türkiye . 75 parts In-Stock

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Overview

Discover the next level of image capturing with the MT9V022177ATM by Onsemi. As a leading manufacturer of image sensors, Onsemi delivers superior quality and reliability in every product. The MT9V022177ATM offers unmatched value with its high-resolution pixel size and impressive dynamic range. Ideal for a wide range of applications, this CMOS image sensor provides crisp, clear images with minimal distortion. Experience the benefits of advanced technology and precision engineering with the MT9V022177ATM, your solution for exceptional image quality.

Feature Benefit Bullets

Pixel Size (um): 6X6

A smaller pixel size allows for higher resolution and better image quality.

Maximum Supply Voltage: 3.6 V

Higher supply voltage allows for better performance and stability of the image sensor.

Master Clock: 26.6 MHz

A higher master clock frequency enables faster data processing and quicker image capture.

Body Width: 9 inch

The larger body width provides more space for additional features and components in the image sensor.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors are known for low power consumption, high sensitivity, and excellent image quality.

Body Height: 1.3 mm

Compact body height allows for easy integration into various devices and systems.

Package Shape or Style: SQUARE

Square package shape makes it easier for mounting and alignment during manufacturing processes.

Minimum Supply Voltage: 3 V

Lower minimum supply voltage helps in saving power and extends battery life in portable devices.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance in a wide range of environments.

Horizontal Pixel: 752

Higher resolution with more horizontal pixels allows for detailed and clear images.

Output Range: 0.30-2.60V

Wide output range provides flexibility in signal processing and compatibility with different systems.

Output Type: DIGITAL VOLTAGE

Digital output simplifies signal processing and integration with digital devices.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in extreme cold conditions without performance issues.

Maximum Operating Current: 60 mA

Lower operating current helps in reducing power consumption and heat generation in the image sensor.

Dynamic Range: 54.4 dB

Higher dynamic range ensures better contrast and clarity in captured images.

Vertical Pixel: 480

Good vertical resolution for capturing detailed images in both landscape and portrait orientations.

Body Length/Diameter: 9 mm

Compact body length/diameter ensures easy integration and space-saving design in devices.

Optical Format (inch): 1/3

1/3 inch optical format provides a good balance between sensor size and image quality.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections during assembly and usage.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface allows for easy communication with other components and systems.

Frame Rate: 60 fps

High frame rate enables smooth and efficient video recording and real-time image processing.

Array Type: FRAME

Frame array type provides better organization and control of pixels for capturing images.

Mounting Feature: SURFACE MOUNT

Surface mount feature simplifies the mounting process during manufacturing and ensures secure attachment.

Technical Specifications

Image Sensors MT9V022177ATM attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

54.4 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

Master Clock:

26.6 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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