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NOIP1SE2000A-LTI

Onsemi

NOIP1SE2000A-LTI by Onsemi

NOIP1SE2000A-LTI by Onsemi features 4.8X4.8 um pixel size, 360 MHz master clock, and 1920x1200 resolution. Ideal for image sensing applications with a spectral response of 400-1000 nm and frame rate of 230 fps.

Median Price

$178.440

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 40 parts In-Stock

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$193.610

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$167.800

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$167.800

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Verical

USA . 126 parts In-Stock

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$163.270

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126

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Digiode

USA . 1,448 parts In-Stock

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$154.138

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Vyrian

USA . 7,424 parts In-Stock

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Flip Electronics

USA . 110 parts In-Stock

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Corphita

USA . 1,513 parts In-Stock

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$146.025

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$146.025

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Corohmni

South Africa . 495 parts In-Stock

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$184.600

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495

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Kulean Microsystems

USA . 6,957 parts In-Stock

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Problanco Electronics

Mexico . 3,124 parts In-Stock

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TANS Electronics

Latvia . 2,434 parts In-Stock

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SupplyDigital Components

Austria . 1,795 parts In-Stock

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UHIMA Technologies

Türkiye . 94 parts In-Stock

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Overview

Elevate your imaging projects with the NOIP1SE2000A-LTI by Onsemi, a top-tier manufacturer renowned for cutting-edge technology and reliability. As a leading product in the Image Sensors category, this sensor offers unmatched quality and precision, making it ideal for applications in various industries. Experience superior performance and seamless integration with a wide range of benefits, including exceptional value, high sensitivity, and a dynamic range that ensures optimal results. Trust the NOIP1SE2000A-LTI to elevate your imaging solutions to new heights.

Feature Benefit Bullets

Pixel Size (um): 4.8X4.8

Smaller pixel size allows for higher resolution and improved image quality.

Maximum Supply Voltage: 1.9 V

Higher maximum supply voltage provides stability and reliability during operation.

Master Clock: 360 MHz

High master clock frequency ensures fast data processing and high frame rates.

Body Width: 19 inch

Compact body width makes it easy to integrate into various electronic devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor type offers low power consumption and high sensitivity to light.

Body Height: 1.78 mm

Low body height allows for slim device designs and flexibility in installation.

Package Shape or Style: SQUARE

Square package shape provides easy alignment and handling during assembly.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage helps in reducing power consumption and heat generation.

Maximum Operating Temperature: 85 °C

Wide operating temperature range ensures reliability in diverse environmental conditions.

Horizontal Pixel: 1920

High horizontal pixel count enables detailed and sharp images.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in harsh cold environments.

Dynamic Range: 60 dB

Wide dynamic range captures both bright and dark areas of an image accurately.

Vertical Pixel: 1200

Vertical pixel count contributes to the overall image resolution and quality.

Body Length/Diameter: 19 mm

Compact body length/diameter for space-saving and flexible integration options.

Spectral Response (nm): 400-1000

Wide spectral response range captures a broad range of colors and light wavelengths.

Optical Format (inch): 2/3

Common optical format for compatibility with various lenses and imaging systems.

Termination Type: SOLDER

Solder termination ensures secure and reliable electrical connections.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface for easy data transfer and communication with external devices.

Frame Rate: 230 fps

High frame rate enables smooth and real-time imaging and video recording.

Array Type: FRAME

Frame array type for efficient image capture and processing.

Sensitivity (V/lx.s): 7.5 V/lx.s

High sensitivity results in clear and detailed images even in low-light conditions.

Mounting Feature: SURFACE MOUNT

Surface mount feature for easy and secure installation on circuit boards.

Technical Specifications

Image Sensors NOIP1SE2000A-LTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

19 inch

Body Height:

1.78 mm

Body Length/Diameter:

19 mm

Dynamic Range:

60 dB

Frame Rate:

230 fps

Horizontal Pixel:

1920

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

2/3

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.8X4.8

Sensitivity (V/lx.s):

7.5 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1200

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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