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KAF-0402-AAA-CB-AE

Onsemi

KAF-0402-AAA-CB-AE by Onsemi

The Onsemi KAF-0402-AAA-CB-AE is a CCD image sensor with 9x9 um pixel size, offering 768 horizontal and 512 vertical pixels. It operates at a supply voltage range of 14.75V to 15.5V, providing a dynamic range of 76 dB. This rectangular package sensor has a data rate of 10 Mbps and is suitable for full-frame imaging applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,050 parts In-Stock

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Digiode

USA . 194 parts In-Stock

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Kulean Microsystems

USA . 6,120 parts In-Stock

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Problanco Electronics

Mexico . 4,472 parts In-Stock

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TANS Electronics

Latvia . 2,915 parts In-Stock

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SupplyDigital Components

Austria . 2,871 parts In-Stock

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Corphita

USA . 1,290 parts In-Stock

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Corohmni

South Africa . 244 parts In-Stock

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UHIMA Technologies

Türkiye . 142 parts In-Stock

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Overview

Capture every moment with crystal clear precision using the KAF-0402-AAA-CB-AE by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality image sensors that guarantee unparalleled performance and reliability. Ideal for a wide range of applications, this CCD image sensor offers exceptional value, providing customers with high-resolution images and a dynamic range of 76 dB. Trust Onsemi to provide cutting-edge technology that exceeds expectations and ensures exceptional results every time.

Feature Benefit Bullets

Pixel Size (um): 9X9

Smaller pixel size allows for greater resolution, resulting in high-quality images with fine details.

Maximum Supply Voltage: 15.5 V

Higher supply voltage allows for efficient power usage and optimal performance of the image sensor.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors are known for their high-quality image capture and low noise levels, making them ideal for imaging applications.

Package Shape or Style: RECTANGULAR

Rectangular packaging allows for easy integration into various electronic devices and systems.

Minimum Supply Voltage: 14.75 V

Lower minimum supply voltage ensures compatibility with a wide range of power sources.

Dynamic Range: 76 dB

High dynamic range enables the sensor to capture a wide range of light intensities, resulting in detailed and vibrant images.

Data Rate: 10 Mbps

Fast data rate allows for quick transfer of image data, making this sensor suitable for applications requiring real-time image processing.

Termination Type: SOLDER

Solder termination provides a reliable and durable connection, ensuring long-term performance of the image sensor.

Array Type: FULL FRAME

Full-frame array design maximizes light sensitivity and image resolution for superior image quality.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting makes installation and replacement of the image sensor easy and secure, enhancing overall product reliability.

Technical Specifications

Image Sensors KAF-0402-AAA-CB-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 10 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Data Rate:

10 Mbps

Dynamic Range:

76 dB

Horizontal Pixel:

768

Housing:

CERAMIC

Mounting Feature:

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.75 V

Termination Type:

SOLDER

Vertical Pixel:

512

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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