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AR0330CM1C25SUD20

Onsemi

AR0330CM1C25SUD20 by Onsemi

Onsemi's AR0330CM1C25SUD20 is a 2.2x2.2um CMOS image sensor with 2304H x 1536V pixels, operating at 27MHz clock rate. It offers a dynamic range of 69.5dB and spectral response of 350-1150nm, suitable for applications requiring high-resolution imaging in automotive cameras and surveillance systems.

Median Price

$0.024

Lifecycle Status

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3

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1k+

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Flip Electronics

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Overview

Unlock the power of high-quality imaging with the AR0330CM1C25SUD20 by Onsemi. As a leading manufacturer in image sensors, Onsemi delivers cutting-edge technology for a wide range of applications. This innovative CMOS sensor offers exceptional value with its superior performance, reliability, and versatility. From security systems to automotive cameras, this sensor provides crystal-clear images with a dynamic range of 69.5 dB. Trust Onsemi to provide top-of-the-line solutions for all your imaging needs.

Feature Benefit Bullets

Pixel Size (um)

The small pixel size of 2.2X2.2 um allows for high-resolution images to be captured with great detail.

Maximum Supply Voltage

The low maximum supply voltage of 1.9 V helps in reducing power consumption and ensuring efficient operation.

Master Clock

With a high master clock frequency of 27 MHz, this image sensor is capable of capturing fast-moving objects with precision.

Sensors or Transducers Type

Being a CMOS image sensor, it offers low power consumption, high-speed operation, and integration of advanced features for superior image quality.

Minimum Supply Voltage

The low minimum supply voltage of 1.7 V ensures stable operation and compatibility with a wide range of power sources.

Maximum Operating Temperature

With a maximum operating temperature of 70 °C, this image sensor can perform reliably even in demanding environmental conditions.

Horizontal Pixel

The high horizontal pixel count of 2304 results in sharp and detailed images, suitable for various applications.

Output Range

The digital voltage output range of 0.40-1.40V provides accurate and consistent signal transmission for image processing.

Output Type

The digital voltage output type ensures compatibility with modern digital image processing systems and simplifies data transmission.

Minimum Operating Temperature

With a minimum operating temperature of -30 °C, this image sensor can function reliably in extreme cold conditions.

Maximum Operating Current

The low maximum operating current of 137 mA contributes to energy efficiency and extends the battery life of devices equipped with this sensor.

Dynamic Range

A high dynamic range of 69.5 dB ensures excellent image quality by capturing details in both bright and dark areas of the scene.

Vertical Pixel

The vertical pixel count of 1536 complements the high horizontal resolution, resulting in well-balanced and detailed image output.

Spectral Response (nm)

With a broad spectral response range of 350-1150 nm, this sensor can capture a wide range of colors and details in various lighting conditions.

Optical Format (inch)

The 1/3 inch optical format is a common industry standard, allowing easy integration into a wide range of imaging systems and applications.

Termination Type

The solder termination type simplifies the assembly process and provides a reliable connection for seamless integration into electronic devices.

Output Interface Type

The 2-wire interface type enables easy communication with other components and devices, facilitating seamless data transfer and integration.

Frame Rate

With a high frame rate of 60 fps, this sensor can capture fast-moving subjects and dynamic scenes with smooth and detailed results.

Array Type

The frame array type is suited for capturing still images or recording video footage with high resolution and clarity.

Sensitivity (V/lx.s)

The high sensitivity of 2 V/lx.s allows this sensor to effectively capture low-light scenes with minimal noise and excellent image quality.

Mounting Feature

The surface mounting feature offers easy and secure installation of the sensor onto circuit boards, making it suitable for compact device designs.

Technical Specifications

Image Sensors AR0330CM1C25SUD20 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.7-2.9V

Array Type:

FRAME

Dynamic Range:

69.5 dB

Frame Rate:

60 fps

Horizontal Pixel:

2304

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

137 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensitivity (V/lx.s):

2 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

350-1150

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1536

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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