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NOIP3FN1300A-QDI

Onsemi

NOIP3FN1300A-QDI by Onsemi

NOIP3FN1300A-QDI by Onsemi is an Image Sensor with 4.80X4.80 um pixel size, 1.9V max supply voltage, and 72 MHz master clock. Ideal for applications requiring high-speed digital imaging with a resolution of 1280x1024 pixels at a frame rate of 210 fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,471 parts In-Stock

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Digiode

USA . 1,720 parts In-Stock

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AZTECH Wire

Italy . 1,218 parts In-Stock

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$15.890

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SupplyDigital Components

Austria . 7,339 parts In-Stock

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TANS Electronics

Latvia . 5,458 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kulean Microsystems

USA . 4,435 parts In-Stock

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Corphita

USA . 1,575 parts In-Stock

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Problanco Electronics

Mexico . 1,460 parts In-Stock

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Corohmni

South Africa . 370 parts In-Stock

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UHIMA Technologies

Türkiye . 125 parts In-Stock

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Overview

Capture every moment with the NOIP3FN1300A-QDI Image Sensor by Onsemi. Designed with cutting-edge technology and precision engineering, this sensor delivers unparalleled image quality and clarity. Whether you're a photography enthusiast, security system developer, or industrial automation professional, this sensor offers unmatched performance and reliability. Say goodbye to blurry images and hello to crisp, vibrant visuals that will take your projects to the next level. Trust Onsemi to provide top-of-the-line solutions for all your imaging needs.

Feature Benefit Bullets

Pixel Size (um): 4.80X4.80

The small pixel size allows for high-resolution images with fine details, making this sensor suitable for applications that require detailed image capture.

Maximum Supply Voltage: 1.9 V

The low maximum supply voltage reduces power consumption and heat generation, making the sensor energy-efficient and suitable for portable devices.

Body Width: 14.22 inch

The compact body width allows for easy integration into various devices and systems without taking up a lot of space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors provide high-quality and low-noise image capture, making this sensor a reliable choice for imaging applications.

Dynamic Range: 60 dB

The wide dynamic range allows the sensor to capture both bright and dark areas in an image accurately, resulting in high-quality and balanced images.

Optical Format (inch): 1/2

The 1/2-inch optical format offers a good balance between image quality and sensor size, making this sensor suitable for a wide range of applications.

Frame Rate: 210 fps

The high frame rate enables the sensor to capture fast-moving objects with smooth motion, making it ideal for applications that require high-speed image capture.

Technical Specifications

Image Sensors NOIP3FN1300A-QDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3V NOMINAL SUPPLY VOLTAGE; IT ALSO HAVE MASTER CLOCK 360 MHZ (10-BIT) AND 288 MHZ (8-BIT) WHEN PLL IS NOT USED

Array Type:

FULL FRAME

Body Width:

14.22 inch

Body Height:

2.28 mm

Body Length/Diameter:

14.22 mm

Data Rate:

72 Mbps

Dynamic Range:

60 dB

Frame Rate:

210 fps

Horizontal Pixel:

1280

Master Clock:

72 MHz

Mounting Feature:

Maximum Operating Current:

80 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1024

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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