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NOIP1SN5000A-QTI

Onsemi

NOIP1SN5000A-QTI by Onsemi

NOIP1SN5000A-QTI by Onsemi is a 4.8x4.8 um CMOS image sensor with 2592x2048 pixels, offering a dynamic range of 60 dB and sensitivity of 7.5 V/lx.s. It operates b/w -40 to 85 °C, has a max supply voltage of 1.9 V, and supports a frame rate of 100 fps. Ideal for applications requiring high-resolution imaging in various lighting conditions.

Median Price

$369.850

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 82 parts In-Stock

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$233.480

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$203.166

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Chip1Stop

Japan . 24 parts In-Stock

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$858.000

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$858.000

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Arrow

USA . 42 parts In-Stock

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$369.850

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$362.550

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$351.590

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$369.850

$362.550

$351.590

Verical

USA . 42 parts In-Stock

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$369.850

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$362.550

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$351.590

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$362.550

$351.590

Mouser Electronics

USA . 42 parts In-Stock

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$203.160

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Flip Electronics (Authorized)

USA . 42 parts In-Stock

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Digiode

USA . 409 parts In-Stock

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$221.806

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NAC Semi

USA . 18 parts In-Stock

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$309.350

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Vyrian

USA . 8,241 parts In-Stock

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Nova Conductors

Japan . 87 parts In-Stock

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Flip Electronics

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LIBRA Elektronik GmbH

Germany . 3 parts In-Stock

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Ampacity Inc.

Singapore . 48 parts In-Stock

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$168.740

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Corohmni

South Africa . 384 parts In-Stock

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$198.520

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Corphita

USA . 980 parts In-Stock

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$210.132

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Metaverse IC Inc.

Canada . 10,000 parts In-Stock

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Kulean Microsystems

USA . 7,963 parts In-Stock

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Argo Parts USA

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Problanco Electronics

Mexico . 3,715 parts In-Stock

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SupplyDigital Components

Austria . 3,425 parts In-Stock

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Kepictronics

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Perfect Parts

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Continental Prestige Electronics

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Netroflash

USA . 2,000 parts In-Stock

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TANS Electronics

Latvia . 1,295 parts In-Stock

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GreenTree Electronics

Israel . 547 parts In-Stock

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Authorized Procurement Solutions

USA . 495 parts In-Stock

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UHIMA Technologies

Türkiye . 371 parts In-Stock

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Overview

Discover the innovative NOIP1SN5000A-QTI image sensor by Onsemi, setting new standards in imaging technology. With a wide range of applications in industries such as automotive, security, and consumer electronics, this sensor delivers exceptional quality and performance. Featuring a compact square design and advanced CMOS technology, it offers customers unmatched value with its high sensitivity, fast frame rate, and impressive dynamic range. Trust Onsemi's reputation for excellence and elevate your imaging solutions with the NOIP1SN5000A-QTI.

Feature Benefit Bullets

Pixel Size (um): 4.8X4.8

Small pixel size allows for high resolution images to be captured

Maximum Supply Voltage: 1.9 V

Low power consumption, reducing energy costs

Master Clock: 360 MHz

Fast processing speeds for efficient image capturing

Body Width: 19 inch

Compact size for easy integration into various devices

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology provides high image quality and low power consumption

Body Height: 2.41 mm

Slim profile for flexible placement options

Package Shape or Style: SQUARE

Simplifies the design and assembly process

Minimum Supply Voltage: 1.7 V

Supports a wide range of power supply options

Maximum Operating Temperature: 85 °C

Can operate in various environmental conditions

Horizontal Pixel: 2592

High horizontal resolution for detailed images

Minimum Operating Temperature: -40 °C

Can withstand low temperature environments

Dynamic Range: 60 dB

Captures a wide range of lighting conditions

Vertical Pixel: 2048

High vertical resolution for clear images

Body Length/Diameter: 19 mm

Compact size for space-saving installations

Spectral Response (nm): 400-1000

Works well in the visible light spectrum

Termination Type: SOLDER

Secure termination for reliable connections

Output Interface Type: 4-WIRE INTERFACE

Easy connectivity with other devices

Frame Rate: 100 fps

High frame rate for smooth video recording

Array Type: FRAME

Structured array layout for efficient image processing

Sensitivity (V/lx.s): 7.5 V/lx.s

High sensitivity for accurate image capture in various lighting conditions

Mounting Feature: SURFACE MOUNT

Simple and secure mounting method for easy installation

Technical Specifications

Image Sensors NOIP1SN5000A-QTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

19 inch

Body Height:

2.41 mm

Body Length/Diameter:

19 mm

Dynamic Range:

60 dB

Frame Rate:

100 fps

Horizontal Pixel:

2592

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.8X4.8

Sensitivity (V/lx.s):

7.5 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

2048

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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