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NOIP1SF0480A-STI

Onsemi

NOIP1SF0480A-STI by Onsemi

NOIP1SF0480A-STI by Onsemi features 4.80x4.80 um pixel size, 68 MHz master clock, and 808 horizontal pixels. This image sensor is ideal for applications requiring high-speed imaging with a frame rate of 120 fps in a compact surface mount package.

Median Price

$31.160

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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DigiKey

USA . 83 parts In-Stock

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$31.160

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$24.964

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Digiode

USA . 1,882 parts In-Stock

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$35.692

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Vyrian

USA . 3,804 parts In-Stock

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Flip Electronics

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Corphita

USA . 1,646 parts In-Stock

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$33.813

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Corohmni

South Africa . 253 parts In-Stock

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$37.570

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TANS Electronics

Latvia . 7,859 parts In-Stock

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Problanco Electronics

Mexico . 7,759 parts In-Stock

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Kulean Microsystems

USA . 3,388 parts In-Stock

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SupplyDigital Components

Austria . 2,797 parts In-Stock

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UHIMA Technologies

Türkiye . 311 parts In-Stock

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Overview

Capture every moment in stunning detail with the NOIP1SF0480A-STI Image Sensor by Onsemi. With a pixel size of 4.80X4.80 um and a dynamic range of 59 dB, this sensor delivers unparalleled image quality for your projects. Whether you're designing a security system, a medical imaging device, or a cutting-edge camera, this sensor's 68 Mbps data rate and 120 fps frame rate ensure smooth and high-resolution image capture. Trust in Onsemi's reputation for excellence in semiconductor manufacturing to bring you the best in image sensor technology. Elevate your creations with the NOIP1SF0480A-STI today.

Feature Benefit Bullets

Pixel Size (um): 4.80X4.80

Larger pixel size allows for more light to be captured, resulting in better image quality especially in low-light conditions.

Maximum Supply Voltage: 1.9 V

Higher maximum supply voltage allows for flexibility in power supply options and can help in optimizing performance.

Master Clock: 68 MHz

High master clock frequency enables fast data processing and high frame rates, making this sensor suitable for applications requiring quick image capture.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors are known for low power consumption and high integration capability, making them a popular choice for various imaging applications.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for easy integration into different device designs and mounting configurations.

Dynamic Range: 59 dB

High dynamic range helps capture a wider range of light intensity levels, resulting in more detailed and accurate images.

Frame Rate: 120 fps

High frame rate enables smooth and detailed image capture, making this sensor suitable for applications requiring fast motion capture.

Technical Specifications

Image Sensors NOIP1SF0480A-STI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3V NOMINAL SUPPLY VOLTAGE; IT ALSO HAVE MASTER CLOCK 340 MHZ (10-BIT) AND 272 MHZ (8-BIT) WHEN PLL IS NOT USED

Array Type:

FULL FRAME

Body Width:

4.93 inch

Body Height:

.75 mm

Body Length/Diameter:

6.13 mm

Data Rate:

68 Mbps

Dynamic Range:

59 dB

Frame Rate:

120 fps

Horizontal Pixel:

808

JESD-609 Code:

e1

Master Clock:

68 MHz

Mounting Feature:

Maximum Operating Current:

59 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3.6

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

608

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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