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AS0142ATSC00XUSM0-DRBR-E

Onsemi

AS0142ATSC00XUSM0-DRBR-E by Onsemi

Onsemi's AS0142ATSC00XUSM0-DRBR-E is a 3x3 um CMOS image sensor with 1280H x 800V pixels. It operates at a max supply voltage of 1.89V, has a master clock of 27 MHz, and offers a dynamic range of 93 dB. Ideal for applications requiring high-resolution imaging in compact devices.

Median Price

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Lifecycle Status

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Vyrian

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Digiode

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TANS Electronics

Latvia . 7,186 parts In-Stock

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Kulean Microsystems

USA . 6,322 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

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Corohmni

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Native Components

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Corphita

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Northwest PG Solutions

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UHIMA Technologies

Türkiye . 36 parts In-Stock

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Overview

Capture stunning images with the AS0142ATSC00XUSM0-DRBR-E image sensor from Onsemi. Renowned for their high-quality products, Onsemi is a trusted manufacturer in the industry. This sensor, with its 3x3 pixel size and impressive 93 dB dynamic range, is perfect for applications that demand superior image quality. Whether you're designing a security camera or a medical imaging device, this sensor offers exceptional value with its reliable performance and advanced features. Experience the benefits of cutting-edge technology with the AS0142ATSC00XUSM0-DRBR-E image sensor.

Feature Benefit Bullets

Pixel Size (um): 3X3

Larger pixel size can capture more light, resulting in better image quality and improved low-light performance.

Maximum Supply Voltage: 1.89 V

Higher maximum supply voltage allows for flexibility in power supply options.

Master Clock: 27 MHz

High master clock frequency enables faster data processing and image capture speed.

Body Width: 8.5 inch

Compact body width allows for easy integration into various devices or systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology offers high sensitivity, low noise, and low power consumption.

Body Height: 1.57 mm

Low body height enables slim device design and easy placement in tight spaces.

Package Shape or Style: SQUARE

Square package shape provides efficient use of space and easy mounting.

Minimum Supply Voltage: 1.71 V

Lower minimum supply voltage helps in reducing power consumption and extending battery life.

Maximum Operating Temperature: 105 °C

Wide operating temperature range allows for use in various environmental conditions.

Horizontal Pixel: 1280

High horizontal pixel count provides detailed and high-resolution images.

Output Range: 0.36-1.44V

Wide output voltage range offers flexibility for signal processing and compatibility with different systems.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies interfacing with digital systems and reduces noise interference.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for reliable performance in cold environments.

Housing: PLASTIC

Plastic housing offers lightweight, durable, and cost-effective solution for the image sensor.

Dynamic Range: 93 dB

High dynamic range ensures accurate capture of both bright and dark areas in the image.

Vertical Pixel: 800

Adequate vertical pixel count provides balanced image resolution and aspect ratio.

Body Length/Diameter: 8.5 mm

Compact body length/diameter allows for versatile mounting options and space-saving design.

Optical Format (inch): 1/4

Common optical format for compatibility with standard optics and lenses.

Termination Type: SOLDER

Solder termination ensures secure connections for reliable performance and durability.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies integration with other devices and communication protocols.

Frame Rate: 60 fps

High frame rate enables smooth and real-time video capture with reduced motion blur.

Array Type: FRAME

Frame array type allows for simultaneous capture of multiple pixels, enhancing image processing speed.

Mounting Feature: SURFACE MOUNT

Surface mount option provides easy and secure installation on PCBs or other surfaces.

Technical Specifications

Image Sensors AS0142ATSC00XUSM0-DRBR-E attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.66-2.94 V

Array Type:

FRAME

Body Width:

8.5 inch

Body Height:

1.57 mm

Body Length/Diameter:

8.5 mm

Dynamic Range:

93 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

Housing:

PLASTIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensors or Transducers Type:

Maximum Supply Voltage:

1.89 V

Minimum Supply Voltage:

1.71 V

Termination Type:

SOLDER

Vertical Pixel:

800

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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