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AS0142ATSC00XUSM0-DPBR-E

Onsemi

AS0142ATSC00XUSM0-DPBR-E by Onsemi

AS0142ATSC00XUSM0-DPBR-E by Onsemi is an image sensor with 3x3 um pixel size, 27 MHz master clock, and 1.89V max supply voltage. Ideal for digital cameras, surveillance systems, and automotive applications due to its high resolution and wide operating temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,487 parts In-Stock

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Digiode

USA . 292 parts In-Stock

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Problanco Electronics

Mexico . 4,262 parts In-Stock

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TANS Electronics

Latvia . 3,721 parts In-Stock

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Kulean Microsystems

USA . 3,553 parts In-Stock

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Northwest PG Solutions

USA . 1,676 parts In-Stock

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$3.353

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SupplyDigital Components

Austria . 1,124 parts In-Stock

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Native Components

USA . 640 parts In-Stock

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$3.319

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Corphita

USA . 411 parts In-Stock

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UHIMA Technologies

Türkiye . 246 parts In-Stock

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Corohmni

South Africa . 236 parts In-Stock

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Overview

Capture the essence of every moment with the AS0142ATSC00XUSM0-DPBR-E by Onsemi. As a leader in image sensor technology, Onsemi's product offers unparalleled quality and reliability. Ideal for a wide range of applications, this image sensor provides crystal-clear images with a dynamic range of 93 dB. With a compact design and easy-to-use interface, customers can experience the value and benefits of this innovative technology. Elevate your imaging experience with the AS0142ATSC00XUSM0-DPBR-E by Onsemi.

Feature Benefit Bullets

Pixel Size (um): 3X3

Smaller pixel size allows for higher resolution images to be captured with more detail.

Maximum Supply Voltage: 1.89 V

Provides a wide operating range for the sensor to function efficiently.

Master Clock: 27 MHz

High master clock frequency enables fast and accurate image capturing and processing.

Body Width: 8.5 inch

Compact body width allows for easy integration into various devices and applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology provides high-quality image output with low power consumption.

Body Height: 1.57 mm

Low body height enables the sensor to be used in slim and compact devices.

Package Shape or Style: SQUARE

Square package shape provides efficient use of space and easy mounting options.

Minimum Supply Voltage: 1.71 V

Low minimum supply voltage helps in reducing power consumption and extending battery life.

Maximum Operating Temperature: 105 °C

High maximum operating temperature ensures reliability and performance in various environmental conditions.

Horizontal Pixel: 1280

High horizontal pixel count results in detailed and high-resolution images.

Output Range: 0.36-1.44V

Wide output voltage range allows for flexible signal processing and compatibility with different systems.

Output Type: DIGITAL VOLTAGE

Digital output voltage simplifies signal processing and transmission for seamless integration.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures functionality even in extreme cold conditions.

Housing: PLASTIC

Plastic housing offers durability, lightweight design, and cost-effectiveness.

Dynamic Range: 93 dB

High dynamic range allows for capturing images with accurate color representation and contrast.

Vertical Pixel: 800

Vertical pixel count contributes to the overall image quality and resolution of the sensor.

Body Length/Diameter: 8.5 mm

Compact body length/diameter provides flexibility in design and integration.

Optical Format (inch): 1/4

Optical format compatibility ensures seamless integration with various imaging systems.

Termination Type: SOLDER

Solder termination offers secure and reliable connections for stable operation.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with other devices.

Frame Rate: 60 fps

High frame rate enables smooth and real-time video recording and image capturing.

Array Type: FRAME

Frame array type provides efficient image capture and processing for various applications.

Mounting Feature: SURFACE MOUNT

Surface mount option allows for easy and secure installation in devices and systems.

Technical Specifications

Image Sensors AS0142ATSC00XUSM0-DPBR-E attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.66-2.94 V

Array Type:

FRAME

Body Width:

8.5 inch

Body Height:

1.57 mm

Body Length/Diameter:

8.5 mm

Dynamic Range:

93 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

Housing:

PLASTIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensors or Transducers Type:

Maximum Supply Voltage:

1.89 V

Minimum Supply Voltage:

1.71 V

Termination Type:

SOLDER

Vertical Pixel:

800

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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