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KAI-2020-ABA-CP-AE

Onsemi

KAI-2020-ABA-CP-AE by Onsemi

KAI-2020-ABA-CP-AE by Onsemi is an image sensor with 7.4x7.4 um pixel size, 1600 horizontal pixels, and 1200 vertical pixels. It operates b/w -50 to 70 °C and has a dynamic range of 68 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,259 parts In-Stock

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Digiode

USA . 206 parts In-Stock

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Problanco Electronics

Mexico . 8,173 parts In-Stock

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Kulean Microsystems

USA . 5,941 parts In-Stock

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TANS Electronics

Latvia . 5,474 parts In-Stock

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SupplyDigital Components

Austria . 5,348 parts In-Stock

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Corphita

USA . 1,793 parts In-Stock

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UHIMA Technologies

Türkiye . 359 parts In-Stock

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Corohmni

South Africa . 91 parts In-Stock

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Overview

Capture stunning images with the KAI-2020-ABA-CP-AE Image Sensor by Onsemi. Crafted with precision and expertise, this sensor is designed to deliver exceptional quality and reliability. Ideal for a wide range of applications, this sensor offers unparalleled value and benefits to customers looking to enhance their imaging capabilities. Experience the advantage of cutting-edge technology and elevate your projects to new heights with the KAI-2020-ABA-CP-AE Image Sensor.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Smaller pixel size allows for higher resolution images to be captured, making this image sensor a good choice for applications requiring detailed images.

Maximum Supply Voltage: 15.5 V

High maximum supply voltage provides flexibility in power requirements, making this image sensor compatible with a wide range of systems.

Body Width: 20.32 inch

Compact body width allows for easy integration into various camera systems, making this image sensor suitable for space-constrained applications.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors are known for their high-quality image capture capabilities, making this image sensor a good choice for applications requiring high image fidelity.

Minimum Operating Temperature: -50 °C

Wide operating temperature range allows this image sensor to be used in harsh environments, making it a reliable choice for outdoor or industrial applications.

Technical Specifications

Image Sensors KAI-2020-ABA-CP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 30 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT ALSO HAVE DYNAMIC RANGE 60 DB

Array Type:

INTERLINE

Body Width:

20.32 inch

Body Height:

4.44 mm

Body Length/Diameter:

33.02 mm

Dynamic Range:

68 dB

Horizontal Pixel:

1600

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1200

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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