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MT9T031C12STC

Onsemi

MT9T031C12STC by Onsemi

Onsemi's MT9T031C12STC is a 3.20x3.20 um CMOS image sensor with 2048H x 1536V pixels, operating at 48 MHz clock speed and offering a dynamic range of 61 dB. It has a digital voltage output interface, operates b/w 0-60°C, and is commonly used in frame array applications for capturing images with high resolution and clarity.

Median Price

$23.474

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 700 parts In-Stock

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$23.474

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700

$23.474

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Digiode

USA . 1,839 parts In-Stock

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Vyrian

USA . 1,602 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 26 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,680 parts In-Stock

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$2.044

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4,680

$2.044

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AZTECH Wire

Italy . 805 parts In-Stock

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$11.209

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805

$11.209

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Corohmni

South Africa . 469 parts In-Stock

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$22.544

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469

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Continental Prestige Electronics

USA . 2,262 parts In-Stock

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$23.474

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$23.005

2,262

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$23.005

Advanced Electronics

New Zealand . 92 parts In-Stock

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$23.943

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$23.943

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$23.943

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92

$23.943

$23.943

$23.943

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Semicontronic

India . 350 parts In-Stock

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$43.750

100+ parts

$42.656

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$42.438

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$43.750

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$42.438

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Kulean Microsystems

USA . 5,406 parts In-Stock

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Problanco Electronics

Mexico . 3,441 parts In-Stock

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TANS Electronics

Latvia . 2,592 parts In-Stock

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Corphita

USA . 1,628 parts In-Stock

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Robosynatics

Brazil . 1,471 parts In-Stock

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Lucentia Tech

USA . 1,471 parts In-Stock

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$23.005

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$22.535

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$22.535

1,471

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$22.535

$22.535

SupplyDigital Components

Austria . 810 parts In-Stock

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810

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Argo Parts USA

USA . 639 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$23.005

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$22.300

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$21.831

500

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$23.005

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$21.831

UHIMA Technologies

Türkiye . 197 parts In-Stock

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Kepictronics

USA . 47 parts In-Stock

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Overview

Elevate your imaging experience with the Onsemi MT9T031C12STC image sensor. Crafted by a trusted manufacturer known for quality and innovation, this sensor offers unparalleled performance in a wide range of applications. With its high pixel density and advanced features, this sensor delivers crystal-clear images with exceptional detail and accuracy. Whether you're capturing moments in photography, enhancing security systems, or exploring new possibilities in machine vision, this sensor provides value, reliability, and superior results that exceed expectations. Upgrade your imaging capabilities with the MT9T031C12STC and unlock a world of possibilities.

Feature Benefit Bullets

Pixel Size (um): 3.20X3.20

The small pixel size allows for high resolution image capture, making this sensor ideal for detailed imaging applications.

Maximum Supply Voltage: 3.6 V

The high maximum supply voltage ensures stable operation and compatibility with a wide range of systems and power sources.

Master Clock: 48 MHz

The fast master clock enables quick data processing and high-speed image capture, making this sensor suitable for dynamic imaging environments.

Body Width: 14.22 inch

The compact body width allows for easy integration into various devices and systems with limited space.

Power Supplies (V): 3.3

The standard power supply voltage of 3.3V ensures compatibility with common power sources and ease of use in different applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, this product offers low power consumption, high sensitivity, and excellent image quality for various imaging tasks.

Body Height: 2.25 mm

The slim body height facilitates mounting and integration in thin devices, making this sensor a versatile choice for compact designs.

Package Shape or Style: SQUARE

The square package shape provides a symmetrical footprint and ease of mounting, enhancing the sensor's overall durability and reliability.

Minimum Supply Voltage: 3 V

The low minimum supply voltage ensures efficient power usage and extends the operational lifespan of the sensor.

Maximum Operating Temperature: 60 °C

With a high maximum operating temperature, this sensor can withstand harsh environmental conditions and maintain optimal performance.

Horizontal Pixel: 2048

The high horizontal pixel count results in detailed and sharp images, making this sensor suitable for high-resolution imaging applications.

Output Range: 0.30-3.30V

The wide output voltage range offers flexibility and compatibility with different systems and interfaces.

Output Type: DIGITAL VOLTAGE

The digital voltage output simplifies connectivity and data processing, making this sensor easy to use in digital imaging systems.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures reliable performance even in cold environments, expanding the sensor's range of applications.

Maximum Operating Current: 27.8 mA

The low maximum operating current helps conserve power and reduces heat generation, ensuring efficient operation and prolonging battery life.

Housing: CERAMIC

The ceramic housing provides durability, heat resistance, and protection for the sensor, making it suitable for demanding industrial applications.

Dynamic Range: 61 dB

The high dynamic range allows the sensor to capture a wide range of light intensities accurately, delivering exceptional image quality.

Vertical Pixel: 1536

The vertical pixel count contributes to the sensor's overall resolution and image quality, making it suitable for various imaging tasks.

Body Length/Diameter: 14.22 mm

The compact body length or diameter allows for a streamlined design and easy integration, making this sensor ideal for space-constrained applications.

Optical Format (inch): 1/2

The optical format of 1/2 inch provides compatibility with standard imaging optics and lenses, ensuring easy customization and flexibility in imaging setups.

Termination Type: SOLDER

The solder termination type offers secure and reliable connections, ensuring stable performance and durability in various operating conditions.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies connectivity and communication with other devices, enhancing usability and compatibility with different systems.

Frame Rate: 12 fps

The frame rate of 12 fps allows for smooth and real-time image capture, making this sensor suitable for applications requiring fast image processing.

Array Type: FRAME

The frame array type facilitates efficient image capture and data processing, ensuring high-quality output in a wide range of imaging scenarios.

Mounting Feature: SURFACE MOUNT

The surface mount design allows for easy and secure mounting on circuit boards, making installation and integration hassle-free.

Technical Specifications

Image Sensors MT9T031C12STC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 3-3.60 V

Array Type:

FRAME

Body Width:

14.22 inch

Body Height:

2.25 mm

Body Length/Diameter:

14.22 mm

Dynamic Range:

61 dB

Frame Rate:

12 fps

Horizontal Pixel:

2048

Housing:

CERAMIC

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

27.8 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1/2

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.20X3.20

Power Supplies (V):

3.3

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

1536

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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